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quality Ultra low jitter clock oscillator SILICON LABS 535AB212M500DGR ideal for high speed differential frequency generation factory
<
quality Ultra low jitter clock oscillator SILICON LABS 535AB212M500DGR ideal for high speed differential frequency generation factory
quality Ultra low jitter clock oscillator SILICON LABS 535AB212M500DGR ideal for high speed differential frequency generation factory
>
Specifications
Frequency Stability:
±20ppm
Voltage - Supply:
3.3V
Operating Temperature:
-40℃~+85℃
Frequency:
212.5MHz
Mfr. Part #:
535AB212M500DGR
Package:
SMD7050-6P
Key Attributes
Model Number: 535AB212M500DGR
Product Description

Skyworks Solutions Si535/536 Ultra Low Jitter Crystal Oscillator (XO)

The Si535/536 XO leverages Skyworks Solutions advanced DSPLL circuitry to deliver an ultra-low jitter clock at high-speed differential frequencies. Unlike traditional XOs that require a unique crystal for each output frequency, the Si535/536 uses a single fixed crystal to support a wide range of output frequencies. This IC-based approach ensures exceptional frequency stability and reliability from the crystal resonator. The DSPLL clock synthesis offers superior supply noise rejection, simplifying the generation of low jitter clocks in noisy environments common in communication systems. The Si535/536 IC-based XO is factory programmed, eliminating long lead times associated with custom oscillators.

Applications

  • 10/40/100G data centers
  • 10G Ethernet switches/routers
  • Fibre channel/SAS/storage
  • Enterprise servers
  • Networking
  • Telecommunications

Product Attributes

  • Brand: Skyworks Solutions, Inc.
  • Technology: DSPLL circuitry
  • Package: Industry-standard 5 x 7 mm
  • Compliance: Pb-free/RoHS-compliant
  • Certifications: Meets MIL-STD-883 qualification test requirements

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit Notes
Electrical Specifications
Supply Voltage VDD 3.3 V option 2.97 3.3 3.63 V Selectable parameter specified by part number.
VDD 2.5 V option 2.25 2.5 2.75 V Selectable parameter specified by part number.
Supply Current IDD Output enabled, LVPECL 111 121 mA
IDD Output enabled, LVDS 90 98 mA
IDD Tristate mode 60 75 mA
Output Enable (OE) VIH 0.75 x VDD V OE pin includes a 17 k pullup resistor to VDD.
VIL 0.5 V OE pin includes a 17 k pullup resistor to VDD.
Operating Temperature Range TA -40 85 C
Frequency Characteristics
Nominal Frequency fO LVPECL/LVDS 100 312.5 MHz See Section 3. "Ordering Information" for available frequencies.
Initial Accuracy fi Measured at +25 C at time of shipping 1.5 ppm
Temperature Stability -7 +7 ppm Selectable parameter specified by part number.
-20 +20 ppm Selectable parameter specified by part number.
Aging (1st year) fa Frequency drift over first year 3 ppm
Aging (20 year) fa Frequency drift over 20 year life 10 ppm
Total Stability Temp stability = 20 ppm 31.5 ppm
Temp stability = 7 ppm 20 ppm
Powerup Time tOSC TA = 40C to +85C 10 ms Time from powerup or tristate mode to fO.
Output Levels and Symmetry
LVPECL Output Option VO Mid-level VDD 1.42 VDD 1.25 V 50 to VDD 2.0 V.
VOD Swing (diff) 1.1 1.9 VPP 50 to VDD 2.0 V.
VSE Swing (Single-ended) 0.55 0.95 VPP 50 to VDD 2.0 V.
LVDS Output Option VO Mid-level 1.125 1.20 1.275 V Rterm = 100 (differential).
VOD Swing (diff) 0.5 0.7 0.9 VPP Rterm = 100 (differential).
Rise/Fall time tR, tF (20/80%) 350 ps
Symmetry (duty cycle) SYM Differential 45 55 %
Phase Jitter
Phase Jitter* (RMS) J 10 kHz to 1 MHz (data center) 0.19 0.35 ps Applies to output frequencies: 156.25 MHz.
J 12 kHz to 20 MHz brickwall 0.25 0.40 ps Applies to output frequencies: 156.25 MHz.
Period Jitter
Period Jitter* JPER RMS 2 ps N = 1000 cycles.
JPER Peak-to-Peak 14 ps N = 1000 cycles.
Environmental Compliance
Mechanical Shock MIL-STD-883, Method 2002
Mechanical Vibration MIL-STD-883, Method 2007
Solderability MIL-STD-883, Method 2003
Gross & Fine Leak MIL-STD-883, Method 1014
Resistance to Solder Heat MIL-STD-883, Method 2036
Moisture Sensitivity Level J-STD-020, MSL1
Contact Pads Gold over Nickel
Thermal Characteristics (Typical values TA = 25 C, VDD = 3.3 V)
Thermal Resistance Junction to Ambient JA Still Air 84.6 C/W
Thermal Resistance Junction to Case JC Still Air 38.8 C/W
Ambient Temperature TA -40 85 C
Junction Temperature TJ 125 C
Absolute Maximum Ratings
Maximum Operating Temperature TAMAX 85 C Stresses beyond those listed may cause permanent damage.
Supply Voltage, 2.5/3.3 V Option VDD -0.5 +3.8 V Stresses beyond those listed may cause permanent damage.
Input Voltage (any input pin) VI -0.5 VDD + 0.3 V Stresses beyond those listed may cause permanent damage.
Storage Temperature TS -55 +125 C Stresses beyond those listed may cause permanent damage.
ESD Sensitivity (HBM, per JESD22-A114) ESD 2500 V
Soldering Temperature (Pb-free profile) TPEAK 260 C Compliant with JEDEC J-STD-020C.
Soldering Temperature Time @ TPEAK (Pb-free profile) tP 20 40 seconds Compliant with JEDEC J-STD-020C.

2508281722_SILICON-LABS-535AB212M500DGR_C2030239.pdf

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