Samsung Chip Inductors and Beads
Samsung Electro-Mechanics offers a comprehensive range of chip inductors and beads designed for various electronic applications. These components are manufactured in accordance with EU RoHS directives and are free from restricted materials and ozone-depleting substances. The product portfolio includes Chip Beads (CIB/CIM Series for EMI Suppression), Power Inductors (CIGT, CIG, CIH, CIL Series), High Current Chip Beads (CIC/CIS Series), GHz Noise Suppression Chip Beads (CIV Series), and LC Filters (Diplexer, Band Pass/Low Pass Filter). These products are engineered for high reliability, excellent solderability, and effective noise suppression, making them suitable for applications in communication equipment, mobile phones, digital cameras, video cameras, PDAs, computers, and more.
- Brand: Samsung Electro-Mechanics
- Compliance: EU RoHS directive
- Environmental Compliance: Free from Cd, Pb, Hg, Cr6+, As, Br, PCB, asbestos, Freon, Haron, 1-1-1 TCE, CCl4, HCFC.
- Certifications: Environmental certification list available (refer to catalog).
Product Series Overview
| Series | Type | Application | Key Features |
|---|---|---|---|
| CIB/CIM Series | Chip Beads | EMI Suppression, General Signal, High Speed Signal, High Current, Ultra High Current | Monolayer (CIB) or Multilayer (CIM) internal conductor for wide band frequency attenuation. Closed magnetic circuit configuration. |
| CIC/CIS Series | Chip Beads | High Current | Low DC resistance for high current applications (up to 3A for CIC, up to 6A for CIS). |
| CIV Series | Chip Beads | GHz Noise Suppression | High impedance in the GHz band for noise suppression. Small size suitable for surface mounting. |
| CIGT Series | Power Inductor | DC-DC Converter | Metal Composite Thin Film. Magnetically shielded structure, low DC resistance. |
| CIG Series | Power Inductor | DC-DC Converter | Ferrite Multilayer. Low profile, magnetically shielded, low DC resistance. Available in Low Rdc, High Current, High Efficiency types. |
| CIH Series | Inductor | High Frequency | Ceramic body with 100% Ag internal conductor for high Q and impedance at high frequencies. Suitable for mobile communication systems, noise suppression, and impedance matching. |
| CIL Series | Inductor | General Inductor | Ferrite body with 100% Ag internal conductor. Magnetic shielding eliminates crosstalk. Excellent solderability and high thermal resistance. |
| Filters | Diplexer | Mobile phones, Wireless LAN | Small and thin size, low insertion loss. Used for separating specific frequencies. |
| Filters | Band Pass/Low Pass Filter | Bluetooth Module, W-LAN Module, WiBro, WiMAX, DMB | High attenuation, low insertion loss. Chip LC filters with RF design and LTCC fabrication technology. |
| EMI Products | 3-Terminal Capacitor | Digital equipment (TV, VCR, LCD monitors), Computer equipment | Capacitor type with low residual inductance. Lower ESL characteristics, high performance at high frequency range. Effective noise suppression filter. |
| Common Mode Filter | Film type | High speed interfaces (LVDS, IEEE1394, USB 2.0, MIPI, S-ata2) | Compact film type, low DC resistance. High speed and ultra high speed types available. |
Technical Specifications (Example: CIGT Series)
| Series | Part Number | Size (Inch/mm) | Thickness (mm) Max | Inductance (H) @1MHz | DC Resistance (m) Typ. | Rated Current Idc1 (A) L=30% Typ. | Rated Current Idc2 (A) L=40 Typ. |
|---|---|---|---|---|---|---|---|
| CIGT | CIGT201210UMR16MNE | 0805/2012 | 1.0 | 0.1620% | 1.0 | 5.0 | 5.0 |
| CIGT | CIGT201210UMR24MNE | 0805/2012 | 1.0 | 0.2420% | 1.0 | 4.0 | 4.5 |
| CIGT | CIGT201210UMR47MNE | 0805/2012 | 1.0 | 0.4720% | 1.0 | 3.0 | 3.3 |
| CIGT | CIGT201608UMR24MNE | 0806/2016 | 0.8 | 0.2420% | 0.8 | 4.3 | 4.7 |
| CIGT | CIGT201608UMR47MNE | 0806/2016 | 0.8 | 0.4720% | 0.8 | 3.3 | 3.6 |
| CIGT | CIGT201610UMR24MNE | 0806/2016 | 1.0 | 0.2420% | 0.9 | 5.1 | 6.0 |
| CIGT | CIGT201610UMR47MNE | 0806/2016 | 1.0 | 0.4720% | 0.9 | 4.1 | 5.2 |
| CIGT | CIGT252010LMR47MNE | 1008/2520 | 1.0 | 0.4720% | 1.0 | 5.0 | 6.0 |
| CIGT | CIGT252012LMR47MNE | 1008/2520 | 1.2 | 0.4720% | 1.0 | 5.2 | 6.0 |
Operating and Storage Conditions
| Parameter | Value |
|---|---|
| Operating Temperature | -40~+125 (Including self-temperature rise) |
| Storage Temperature (After mounting) | -40~+125 |
Note: All information indicated in this catalog is as of May 2014. Specifications are subject to change without notice.
2410311248_Samsung-Electro-Mechanics-CIB32P600NE_C19736748.pdf
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