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quality onsemi EMI7204MUTAG EMI Filter Designed to Minimize Wireless Interference in Data Communication Applications factory
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quality onsemi EMI7204MUTAG EMI Filter Designed to Minimize Wireless Interference in Data Communication Applications factory
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Specifications
Attenuation Value:
23dB@6GHz
Number of Channels:
4
Resistance:
10Ω
Inductance:
17nH
Capacitance:
24.2pF
Operating Temperature:
-40℃~+85℃
Frequency - Cutoff or Center:
250MHz
ESD Protection:
Yes
Mfr. Part #:
EMI7204MUTAG
Package:
UDFN-8-EP(1.4x1.7)
Key Attributes
Model Number: EMI7204MUTAG
Product Description

Product Overview

The EMI720xMU Series is a family of LC EMI filters with integrated ESD protection, designed to minimize wireless interference in parallel interfaces. Featuring L = 17 nH and C = 12 pF, these filters deliver a cutoff frequency of 250 MHz and stop band attenuation greater than -23 dB from 800 MHz to 6.0 GHz. This performance is ideal for applications with data rates up to 125 Mbps, effectively reducing interference from 2G/3G, GPS, Bluetooth, and WLAN signals. The series offers an integrated EMI/ESD system solution in a low-profile UDFN package, providing significant cost, system reliability, and space savings. These devices are Pb-Free.

Product Attributes

  • Brand: ON Semiconductor
  • Certifications: Pb-Free

Technical Specifications

Model Channels Package Type Package Thickness Lead Pitch ESD Protection Inductance (L) Capacitance (C) 3dB Cutoff Frequency (f3dB) Stop Band Attenuation Max Data Rate
EMI7204MU Four UDFN8 0.5 mm 0.4 mm 16 kV IEC61000-4-2 Level 4 (Contact Discharge) 17 nH 12 pF 250 MHz > -23 dB (800 MHz to 6.0 GHz) 125 Mbps
EMI7206MU Six UDFN12 0.5 mm 0.4 mm 16 kV IEC61000-4-2 Level 4 (Contact Discharge) 17 nH 12 pF 250 MHz > -23 dB (800 MHz to 6.0 GHz) 125 Mbps
EMI7208MU Eight UDFN16 0.5 mm 0.4 mm 16 kV IEC61000-4-2 Level 4 (Contact Discharge) 17 nH 12 pF 250 MHz > -23 dB (800 MHz to 6.0 GHz) 125 Mbps
Maximum Ratings
ESD (IEC61000-4-2 Contact Discharge) 16 kV
ESD (Human Body Model MIL-STD-883) 16 kV
Operating Temperature Range 40 to 85 C
Storage Temperature 65 to 150 C
Maximum Lead Temperature for Soldering 260 C
Current per inductor 30 mA
DC package power rating 500 mW
Electrical Characteristics (TJ = 25C unless otherwise noted)
Maximum reverse Working Voltage (VRWM) 5.0 V
Breakdown Voltage (VBR, Positive Clamp, IR = 1.0 mA) 5.6 to 9.0 V
Breakdown Voltage (VBR, Negative Clamp, IR = 1.0 mA) 1.5 to 0.04 V
Leak Current (IR, VRWM = 3.3 V) 0.1 to 1.0 A
Resistance (RA) 10
Diode Capacitance (C1, VR = 2.5 V, f = 1.0 MHz, 30 mVAC) 12 pF
Line Capacitance (Ct) 18.8 to 28.2 pF
Stop Band Attenuation 23 dB from 800 MHz to 6.0 GHz

Applications

  • Wireless Handsets
  • EMI Filtering for LCD and Camera Data Lines
  • EMI Filtering and Protection for I/O Ports and Keypads

2409302136_onsemi-EMI7204MUTAG_C556436.pdf

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