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quality EMI5208MUTAG onsemi EMI filter array with 8 channels 250 MHz cutoff frequency and Pb free UDFN package factory
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quality EMI5208MUTAG onsemi EMI filter array with 8 channels 250 MHz cutoff frequency and Pb free UDFN package factory
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Specifications
Attenuation Value:
20dB@800MHz~5GHz
Number of Channels:
8
Capacitance:
7pF
Operating Temperature:
-40℃~+85℃
Filter Order:
2
Frequency - Cutoff or Center:
250MHz
ESD Protection:
Yes
Mfr. Part #:
EMI5208MUTAG
Package:
UFDFN-16-EP
Key Attributes
Model Number: EMI5208MUTAG
Product Description

Product Overview

The EMI520xMU Series is a family of 4, 6, and 8-channel (C-R-C) Pi-style EMI filter arrays with integrated ESD protection. These devices are designed to minimize wireless interference in parallel interfaces operating at data rates up to 167 Mbps. With typical component values of R = 100 and C = 7 pF, they offer a cutoff frequency of 250 MHz and provide stop band attenuation greater than 20 dB from 800 MHz to 5.0 GHz, effectively mitigating interference from 2G/3G, GPS, Bluetooth, and WLAN signals. The integrated EMI/ESD solution in a low-profile UDFN package offers significant cost, system reliability, and space savings, making them ideal for applications such as EMI filtering for LCD and camera data lines, and protection for I/O ports and keypads.

Product Attributes

  • Brand: Semiconductor Components Industries, LLC (onsemi)
  • Package Type: UDFN (Ultra-Thin Dual Flat No-Lead)
  • Certifications: Pb-Free

Technical Specifications

Model Channels R Value C Value Cutoff Frequency (f3dB) Stop Band Attenuation ESD Protection (Contact Discharge) Package Type Package Dimensions (mm) Lead Pitch (mm) Data Rate (Max)
EMI5204MU 4 100 7 pF 250 MHz > 20 dB (800 MHz - 5.0 GHz) 8.0 kV (IEC61000-4-2 Level 4) UDFN8 1.7 x 1.35 0.4 167 Mbps
EMI5206MU 6 100 7 pF 250 MHz > 20 dB (800 MHz - 5.0 GHz) 8.0 kV (IEC61000-4-2 Level 4) UDFN12 2.5 x 1.35 0.4 167 Mbps
EMI5208MU 8 100 7 pF 250 MHz > 20 dB (800 MHz - 5.0 GHz) 8.0 kV (IEC61000-4-2 Level 4) UDFN16 3.3 x 1.35 0.4 167 Mbps
Electrical Characteristics
Maximum Reverse Working Voltage (VRWM) 5.0 V
Breakdown Voltage (VBR) (IR = 1.0 mA) 6.0 - 8.0 V
Leakage Current (IR) (VRWM = 3.3 V) 100 nA
Resistance (RA) (IR = 10 mA) 85 - 115 (Typical 100 )
Diode Capacitance (Cd) (VR = 2.5 V, f = 1.0 MHz) 7 - 11 pF (Typical 7 pF)
Line Capacitance (CL) (VR = 2.5 V, f = 1.0 MHz) 14 - 22 pF
Maximum Ratings
Operating Temperature Range -40 to 85 C
Storage Temperature Range -55 to 150 C

2410010231_onsemi-EMI5208MUTAG_C462987.pdf

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