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quality onsemi NUF6410MNT1G six channel EMI filter with integrated ESD protection and cutoff frequency of 250 MHz factory
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quality onsemi NUF6410MNT1G six channel EMI filter with integrated ESD protection and cutoff frequency of 250 MHz factory
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Specifications
Number of Channels:
6
Resistance:
100Ω
Operating Temperature:
-40℃~+85℃
Capacitance:
7pF
Frequency - Cutoff or Center:
250MHz
ESD Protection:
Yes
Mfr. Part #:
NUF6410MNT1G
Package:
DFN-12-EP(1.4x3)
Key Attributes
Model Number: NUF6410MNT1G
Product Description

Product Overview

The NUF6410MN is a six-channel (C-R-C) Pi-style EMI filter array with integrated ESD protection. It features typical component values of R = 100 and C = 7 pF, providing a cutoff frequency of 250 MHz and stopband attenuation greater than -20 dB from 800 MHz to 3.0 GHz. This performance is ideal for parallel interfaces with data rates up to 167 Mbps, effectively minimizing interference from 2G/3G, GPS, Bluetooth, and WLAN signals. The device is available in a low-profile 12-lead 1.35 mm x 3.0 mm DFN12 surface mount package, offering integrated EMI/ESD system solution for cost, reliability, and space savings. Applications include EMI filtering for LCD and camera data lines, and I/O ports and keypads.

Product Attributes

  • Brand: ON Semiconductor
  • Pb-Free Device: Yes

Technical Specifications

Model Description ESD Protection (kV) R/C Values Cutoff Frequency (f3dB) Stop Band Attenuation Data Rate (Mbps) Package Ordering Information
NUF6410MN 6-Channel EMI Filter with Integrated ESD Protection 8.0 (IEC61000-4-2 Level 4, Contact Discharge) 100 / 7 pF 250 MHz > -20 dB (800 MHz to 3.0 GHz) Up to 167 DFN12 (1.35 mm x 3.0 mm) NUF6410MNT1G (3000 / Tape & Reel)

Electrical Characteristics

Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Reverse Working Voltage VRWM 5.0 V
Breakdown Voltage VBR IR = 1.0 mA 6.0 7.0 V
Leakage Current IR VRWM = 3.3 V 10 100 nA
Resistance RA IR = 20 mA 85 100 115
Diode Capacitance Cd VR = 2.5 V, f = 1.0 MHz 7.0 9.0 pF
Line Capacitance CL VR = 2.5 V, f = 1.0 MHz 14 18 pF
3 dB Cut-Off Frequency f3dB 250 MHz
6 dB Cut-Off Frequency f6dB 400 MHz

Maximum Ratings

Parameter Symbol Value Unit
ESD Discharge (Contact Discharge) VPP 8.0 kV
DC Power per Resistor PR 100 mW
DC Power per Package PT 600 mW
Operating Temperature Range TOP -40 to 85 C
Storage Temperature Range TSTG -55 to 150 C
Maximum Lead Temperature for Soldering Purposes TL 260 C

Package Dimensions

DFN12, 3.0x1.35, 0.5P (CASE 506AD)

Refer to the provided documentation for detailed dimension specifications.


2410121848_onsemi-NUF6410MNT1G_C513051.pdf

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