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quality Wireless device EMI filtering and ESD protection solution onsemi NUF2230XV6T1G with SOT563 package factory
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quality Wireless device EMI filtering and ESD protection solution onsemi NUF2230XV6T1G with SOT563 package factory
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Specifications
Attenuation Value:
30dB@800MHz~900MHz
Number of Channels:
2
Resistance:
100Ω
Capacitance:
16pF
Operating Temperature:
-40℃~+85℃
Filter Order:
2
Frequency - Cutoff or Center:
125MHz
ESD Protection:
Yes
Mfr. Part #:
NUF2230XV6T1G
Package:
SOT-563
Key Attributes
Model Number: NUF2230XV6T1G
Product Description

Product Overview

The NUF2230XV6 is a 2-line EMI filter array designed for wireless applications, offering both EMI filtering and ESD protection. It provides greater than -30 dB attenuation from 800 MHz to 900 MHz and clamps transients from static discharges, with ESD protection across all capacitors. This integrated solution reduces EMI/RFI emissions on data lines, offers cost and space savings in a SOT-563 package, minimizes parasitic inductances for an improved low-pass filter response, and enhances system reliability. It is suitable for EMI filtering and ESD protection of data lines in wireless phones, PDAs, handheld products, notebook computers, and LCD displays.

Product Attributes

  • Brand: Semiconductor Components Industries, LLC (onsemi)
  • Package: SOT-563
  • Moisture Sensitivity Level: 1
  • Compliance: IEC61000-4-2 (Level 4) > 8.0 kV (Contact)
  • ESD Ratings: Machine Model = C, Human Body Model = 3B
  • Lead Finish: PbFree Devices

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
MAXIMUM RATINGS
ESD Discharge (IEC61000-4-2 Air Discharge) VPP 15 kV
ESD Discharge (IEC61000-4-2 Contact Discharge) VPP 8.0 kV
Steady-State Power per Resistor PR mW
Steady-State Power per Package PT mW
Operating Temperature Range TOP -40 85 C
Storage Temperature Range TSTG -55 150 C
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) TL 260 C
ELECTRICAL CHARACTERISTICS
Maximum Reverse Working Voltage VRWM 5.0 V
Breakdown Voltage VBR IR = 1.0 mA 6.0 7.0 V
Leakage Current IR VRWM = 3.0 V 1.0 µA
Resistance RA IR = 20 mA 90 100 110 Ω
Capacitance (Notes 1 and 2) Cd VR = 2.5 V, f = 1.0 MHz 16 pF
Cut-Off Frequency (Note 3) f3dB Above this frequency, appreciable attenuation occurs 125 MHz

Package Dimensions: SOT-563, 6 LEAD CASE 463A

Soldering Footprint


2410010302_onsemi-NUF2230XV6T1G_C133492.pdf

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