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Specifications
Attenuation Value:
35dB@800MHz~2.7GHz
Number of Channels:
8
Capacitance:
11.5pF
Operating Temperature:
-40℃~+85℃
Filter Order:
5
Frequency - Cutoff or Center:
345MHz
ESD Protection:
Yes
Mfr. Part #:
EMI9408MUTAG
Package:
UFDFN-16-EP
Key Attributes
Model Number:
EMI9408MUTAG
Product Description
Product Overview
The EMI9408 is an inductor-based (L-C) EMI filter array with integrated ESD protection, designed for high-speed data lines. It features eight channels of Pi-style (C-L-C) filters, each with component values of 1.8 pF35 nH4.7 pF35 nH6 pF. The device offers a cut-off frequency of 300MHz and supports data rates up to 160 Mbps, providing over -35 dB attenuation from 800 MHz to 2.7 GHz. Integrated ESD diodes on each I/O pin offer 14 kV ESD protection, exceeding IEC61000-4-2 Level 4 requirements. Its compact uDFN package makes it ideal for space-constrained applications such as wireless handsets, mobile LCD modules, PDAs, and specifically for EMI filtering and protection of data and control lines for LCD displays and cameras in mobile handsets. The device is Pb-Free and RoHS compliant.Product Attributes
- Brand: PRAETORIAN
- Manufacturer: Semiconductor Components Industries, LLC (SCILLC)
- Package Type: uDFN (Pb-Free)
- RoHS Compliant: Yes
Technical Specifications
| Specification | Value | Unit | Conditions |
|---|---|---|---|
| Model | EMI9408 | ||
| Number of Channels | 8 | ||
| Filter Network Type | Pi-Style (C-L-C) | ||
| Component Values per Channel | 1.8 pF35 nH4.7 pF35 nH6 pF | ||
| Cut-off Frequency (3dB Attenuation) | 300 | MHz | |
| Maximum Data Rate | 160 | Mbps | |
| Attenuation | > -35 | dB | 800 MHz to 2.7 GHz |
| ESD Protection (External Pins) | 14 | kV | IEC 61000-4-2 Level 4, Contact Discharge |
| ESD Protection (Internal Pins) | 2 | kV | IEC 61000-4-2 Level 4, Contact Discharge |
| ESD Protection (External Pins, Air Discharge) | 16 | kV | IEC 61000-4-2 Level 4 |
| Package Type | uDFN | 16-lead | |
| Package Dimensions | 3.30 mm x 1.35 mm | ||
| Lead Pitch | 0.40 | mm | |
| Operating Temperature Range | -40 to +85 | C | |
| Storage Temperature Range | -65 to +150 | C | |
| Current per Inductor (Max) | 15 | mA | |
| Package Power Rating (Max) | 500 | mW | |
| Total Channel Inductance (Typ) | 70 | nH | |
| Total Channel DC Resistance (Typ) | 45 | ||
| Total Channel Capacitance (Typ, 0V bias) | 17.5 - 24 | pF | 1 MHz, 30 mVrms |
| Total Channel Capacitance (Typ, 2.5V bias) | 11.5 | pF | 1 MHz, 30 mVrms |
| Stand-off Voltage (Typ) | 5.5 | V | I = 10 A |
| Diode Leakage Current (Max) | 0.5 | A | VIN = +3.3 V |
| Signal Clamp Voltage (Positive, Typ) | 6.8 | V | ILOAD = 10 mA |
| Signal Clamp Voltage (Negative, Typ) | -0.8 | V | ILOAD = -10 mA |
| Clamping Voltage (TLP, Typ) | 13.7 | V | IPP = 8 A |
| Clamping Voltage (TLP, Typ) | 20 | V | IPP = 16 A |
| Clamping Voltage (TLP, Typ) | -4.4 | V | IPP = -8 A |
| Clamping Voltage (TLP, Typ) | -7.6 | V | IPP = -16 A |
| Cut-off Frequency (fC) | 345 | MHz | ZSOURCE = 50 , ZLOAD = 50 |
2411220152_onsemi-EMI9408MUTAG_C463226.pdf
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