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quality EMI filter array onsemi NUF8402MNT4G with 18 kV IEC6100042 level 4 ESD protection contact discharge factory
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quality EMI filter array onsemi NUF8402MNT4G with 18 kV IEC6100042 level 4 ESD protection contact discharge factory
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Specifications
Number of Channels:
8
Resistance:
100Ω
Operating Temperature:
-40℃~+85℃
Capacitance:
17pF
Frequency - Cutoff or Center:
105MHz
ESD Protection:
Yes
Mfr. Part #:
NUF8402MNT4G
Package:
DFN-16-EP(1.6x4)
Key Attributes
Model Number: NUF8402MNT4G
Product Description

Product Overview

The NUF8402MN is an eight-channel (C-R-C) Pi-style EMI filter array with integrated ESD protection. It features typical component values of R = 100 and C = 17 pF, delivering a cutoff frequency of 105 MHz and stop band attenuation greater than -35 dB from 800 MHz to 2.2 GHz. This performance makes it ideal for parallel interfaces with data rates up to 70 Mbps in applications requiring minimized wireless interference, effectively reducing interference from 2G/3G, GPS, Bluetooth, and WLAN signals. The device is available in a low-profile 16-lead 1.6 mm x 4.0 mm DFN16 surface mount package, offering a cost-effective, reliable, and space-saving integrated EMI/ESD system solution.

Product Attributes

  • Brand: ON Semiconductor
  • Certifications: PbFree
  • Package Type: DFN16

Technical Specifications

Model Description R Value C Value Cutoff Frequency (f3dB) Stop Band Attenuation ESD Protection Data Rate Package Order Code
NUF8402MN 8-Channel EMI Filter with Integrated ESD Protection 100 17 pF 105 MHz > -35 dB (800 MHz to 2.2 GHz) 18 kV (IEC6100042 Level 4, Contact Discharge) Up to 70 Mbps DFN16 (4.0 mm x 1.6 mm) NUF8402MNT4G

Key Features & Benefits

  • 18 kV ESD Protection on each channel (IEC6100042 Level 4, Contact Discharge)
  • R/C Values of 100 and 17 pF deliver Exceptional S21 Performance Characteristics of 105 MHz f3dB and 35 dB Stop Band Attenuation from 800 MHz to 2.2 GHz
  • Integrated EMI/ESD System Solution in DFN Package Offers Exceptional Cost, System Reliability and Space Savings
  • PbFree Device

Applications

  • EMI Filtering for LCD and Camera Data Lines
  • EMI Filtering and Protection for I/O Ports and Keypads

Electrical Characteristics

Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Reverse Working Voltage VRWM 5.0 V
Breakdown Voltage VBR IR = 1.0 mA 6.0 7.0 8.0 V
Leakage Current IR VRWM = 3.3 V 100 nA
Resistance RA IR = 20 mA 85 100 115
Diode Capacitance Cd VR = 2.5 V, f = 1.0 MHz 15 17 20 pF
Line Capacitance CL VR = 2.5 V, f = 1.0 MHz 30 34 40 pF
3 dB CutOff Frequency f3dB 105 MHz
6 dB CutOff Frequency f6dB 150 MHz

Note 1: 50 source and 50 load termination.

Ordering Information

Device Package Shipping
DFN16 (PbFree) 4000 / Tape & Reel

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.


2410121840_onsemi-NUF8402MNT4G_C233420.pdf

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