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quality Compact DFN package EMI filter onsemi NUF8401MNT4G with 175 MHz cutoff frequency and integrated ESD protection factory
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quality Compact DFN package EMI filter onsemi NUF8401MNT4G with 175 MHz cutoff frequency and integrated ESD protection factory
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Specifications
Number of Channels:
8
Resistance:
100Ω
Operating Temperature:
-40℃~+85℃
Capacitance:
12pF
Frequency - Cutoff or Center:
175MHz
ESD Protection:
Yes
Mfr. Part #:
NUF8401MNT4G
Package:
DFN-16-EP(1.6x4)
Key Attributes
Model Number: NUF8401MNT4G
Product Description

Product Overview

The NUF8401MN is an eight-channel (C-R-C) Pi-style EMI filter array with integrated ESD protection. It offers a typical component configuration of R = 100 and C = 12 pF, delivering a cutoff frequency of 175 MHz and stop band attenuation greater than -25 dB from 800 MHz to 2.2 GHz. This performance is ideal for parallel interfaces with data rates up to 117 Mbps, effectively minimizing interference from 2G/3G, GPS, Bluetooth, and WLAN signals. The device integrates EMI/ESD protection in a compact DFN package, providing cost, reliability, and space savings. It is suitable for EMI filtering of LCD and camera data lines, as well as I/O ports and keypads.

Product Attributes

  • Brand: ON Semiconductor
  • Certifications: Pb-Free

Technical Specifications

Model Description ESD Protection R/C Values Cutoff Frequency (f3dB) Stop Band Attenuation Data Rate Package Ordering Information
NUF8401MN 8-Channel EMI Filter with Integrated ESD Protection 14 kV (IEC61000-4-2 Level 4, Contact Discharge) 100 / 12 pF 175 MHz > -25 dB (800 MHz to 2.2 GHz) Up to 117 Mbps DFN16 (1.6 mm x 4.0 mm) NUF8401MNT4G

Electrical Characteristics

Parameter Test Conditions Min Typ Max Unit
Maximum Reverse Working Voltage (VRWM) 5.0 V
Breakdown Voltage (VBR) IR = 1.0 mA 6.0 7.0 8.0 V
Leakage Current (IR) VRWM = 3.3 V 100 nA
Resistance (RA) IR = 20 mA 85 100 115
Diode Capacitance (Cd) VR = 2.5 V, f = 1.0 MHz 10 12 15 pF
Line Capacitance (CL) VR = 2.5 V, f = 1.0 MHz 20 24 30 pF
3 dB Cut-Off Frequency (f3dB) 175 MHz
6 dB Cut-Off Frequency (f6dB) 275 MHz

Maximum Ratings

Parameter Symbol Value Unit
ESD Discharge (IEC61000-4-2 Contact Discharge) VPP 14 kV
Steady-State Power per Resistor @ 25C PR 328 mW
Operating Temperature Range TOP -40 to 85 C
Storage Temperature Range TSTG -55 to 150 C
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) TL 260 C

Package Dimensions

Dimension Min Max Unit
A 0.80 1.00 mm
A1 0.00 0.05 mm
A3 0.20 REF mm
b 0.18 0.30 mm
D 4.00 BSC mm
D2 3.10 3.30 mm
E 1.60 BSC mm
E2 0.30 0.50 mm
e 0.50 BSC mm
K 0.20 --- mm
L 0.20 0.40 mm
L1 0.00 0.15 mm

2410010231_onsemi-NUF8401MNT4G_C895158.pdf

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