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quality Silicon MEMS CMOS oscillator MICROCHIP DSC1001CL5-100.0000T offering long battery life and consumption factory
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quality Silicon MEMS CMOS oscillator MICROCHIP DSC1001CL5-100.0000T offering long battery life and consumption factory
quality Silicon MEMS CMOS oscillator MICROCHIP DSC1001CL5-100.0000T offering long battery life and consumption factory
quality Silicon MEMS CMOS oscillator MICROCHIP DSC1001CL5-100.0000T offering long battery life and consumption factory
>
Specifications
Voltage - Supply:
1.8V~3.3V
Frequency Stability:
±10ppm
Mfr. Part #:
DSC1001CL5-100.0000T
Package:
SMD3225-4P
Key Attributes
Model Number: DSC1001CL5-100.0000T
Product Description

Product Overview

The DSC1001/3/4 is a silicon MEMS-based CMOS oscillator family offering exceptional jitter and stability over a wide range of supply voltages and temperatures. Its crystal-less design provides superior reliability, making it ideal for rugged, industrial, and portable applications subjected to stress, shock, and vibration. Available in industry-standard packages, it serves as a pin-for-pin replacement for standard crystal oscillators, offering longer battery life and reduced power consumption.

Product Attributes

  • Brand: Microchip Technology Inc.
  • Material: Silicon MEMS
  • Certifications: Pb Free, RoHS, Reach SVHC Compliant, AEC-Q100 Reliability Qualified

Technical Specifications

ParameterSymbolMin.Typ.Max.UnitsConditions
Frequency RangeF01-150MHzSingle Frequency
f--10ppmFrequency Tolerance (Initial, Temp, Power Supply)
f--20ppmFrequency Tolerance (Initial, Temp, Power Supply)
f--25ppmFrequency Tolerance (Initial, Temp, Power Supply)
Agingf--5ppm1 year @ +25C
Operating VoltageVDD1.7-3.6VRecommended Operating Conditions
VDD-0.3-VDD + 0.3VAbsolute Maximum Ratings (Input Voltage)
VIH0.75 x VDD--VInput Logic Level High
VIL--0.25 x VDDVInput Logic Level Low
Operating Temperature RangeTA40-+105CExtended Industrial
TA40-+85CIndustrial (Ordering Option L)
TA20-+70CCommercial (Ordering Option E)
Supply Current, StandbyIDD--15AMax., T = +25C
IDD-6.06.3mAOperating, 1 MHz, CL = 0 pF, RL = , T = +25C (VDD = 1.8V)
Output Startup TimetSU-1.01.3msT = +25C
Output Disable TimetDA-20100ns-
Output Duty Cycle-45-55%-
Output Logic Level HighVOH0.8 x VDD--V6 mA, DSC1004, CL = 40 pF
VOH0.8 x VDD--V6 mA, DSC1003, CL = 25 pF
VOH0.8 x VDD--V4 mA, DSC1001, CL = 15 pF
Output Logic Level LowVOL--0.2 x VDDV6 mA, DSC1004, CL = 40 pF
VOL--0.2 x VDDV6 mA, DSC1003, CL = 25 pF
VOL--0.2 x VDDV4 mA, DSC1001, CL = 15 pF
Output Transition Rise TimetR-1.43.0nsDSC1001, CL = 15 pF, T = +25C, 20% to 80%
tR-1.53.0nsDSC1003, CL = 25 pF, T = +25C, 20% to 80%
tR-1.83.0nsDSC1004, C2 = 40 pF, T = +25C, 20% to 80%
tR-1.02.0nsDSC1001, CL = 15 pF, T = +25C, 20% to 80% (VDD=2.5V)
tR-1.12.0nsDSC1003, CL = 25 pF, T = +25C, 20% to 80% (VDD=2.5V)
tR-1.22.0nsDSC1004, C2 = 40 pF, T = +25C, 20% to 80% (VDD=2.5V)
tR-1.02.0nsDSC1001, CL = 15 pF, T = +25C, 20% to 80% (VDD=3.3V)
tR-1.12.0nsDSC1003, CL = 25 pF, T = +25C, 20% to 80% (VDD=3.3V)
tR-1.22.0nsDSC1004, C2 = 40 pF, T = +25C, 20% to 80% (VDD=3.3V)
Output Transition Fall TimetF-1.03.0nsDSC1001, CL = 15 pF, T = +25C, 20% to 80%
tF-1.13.0nsDSC1003, CL = 25 pF, T = +25C, 20% to 80%
tF-1.23.0nsDSC1004, C2 = 40 pF, T = +25C, 20% to 80%
tF-0.92.0nsDSC1001, CL = 15 pF, T = +25C, 20% to 80% (VDD=2.5V)
tF-1.02.0nsDSC1003, CL = 25 pF, T = +25C, 20% to 80% (VDD=2.5V)
tF-1.12.0nsDSC1004, C2 = 40 pF, T = +25C, 20% to 80% (VDD=2.5V)
tF-0.92.0nsDSC1001, CL = 15 pF, T = +25C, 20% to 80% (VDD=3.3V)
tF-1.02.0nsDSC1003, CL = 25 pF, T = +25C, 20% to 80% (VDD=3.3V)
tF-1.12.0nsDSC1004, C2 = 40 pF, T = +25C, 20% to 80% (VDD=3.3V)
Jitter, Max. Cycle-to-CycleJCC-60-psf = 100 MHz
JCC-50-psf = 100 MHz (VDD=2.5V, 3.3V)
Period JitterJP-1015psRMSf = 100 MHz
JP-510psRMSf = 100 MHz (VDD=2.5V, 3.3V)
ESD Protection---4kV HBM-
ESD Protection---200V MM-
ESD Protection---1.5kV CDM-
Output LoadZL--15pFDSC1001
Output LoadZL--25pFDSC1003
Output LoadZL--40pFDSC1004
Soldering Temperature RangeTS--+260C40 sec. max

2411041600_MICROCHIP-DSC1001CL5-100-0000T_C1999655.pdf

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