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quality Industrial Silicon MEMS CMOS Oscillator MICROCHIP DSC1001CI5-026.0000 Featuring Superior Reliability factory
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quality Industrial Silicon MEMS CMOS Oscillator MICROCHIP DSC1001CI5-026.0000 Featuring Superior Reliability factory
>
Specifications
Operating Temperature:
-40℃~+85℃
Current - Supply:
6.3mA
Output Type:
CMOS
Voltage - Supply:
1.8V~3.3V
Frequency Stability:
±10ppm
Frequency:
26MHz
Mfr. Part #:
DSC1001CI5-026.0000
Package:
SMD3225-4P
Key Attributes
Model Number: DSC1001CI5-026.0000
Product Description

Product Overview

The DSC1001/3/4 is a silicon MEMS-based CMOS oscillator family offering excellent jitter and stability over a wide range of supply voltages and temperatures. Its crystal-less design provides superior reliability, making it ideal for rugged, industrial, and portable applications. Available in industry-standard packages, it serves as a pin-for-pin replacement for standard crystal oscillators.

Product Attributes

  • Brand: Microchip Technology Inc.
  • Certifications: Pb Free, RoHS, Reach SVHC Compliant, AEC-Q100 Reliability Qualified
  • Material: Silicon MEMS

Technical Specifications

ParameterSymbolMinTypMaxUnitsConditions
Frequency RangeF01150MHzSingle Frequency
f10ppmFrequency Tolerance (10, 20, 25, 50 ppm options)
f5ppmAging (1 year @ +25C)
F01150MHzSingle Frequency
Operating VoltageVDD1.73.6VRecommended Operating Conditions
VDD1.83.3VElectrical Characteristics
Operating Temperature RangeTA40+105CExternal Industrial
TA40+85CIndustrial (Ordering Option L)
TA20+70CCommercial (Ordering Option E)
Supply Current (Standby)IDD15AMax. (T = +25C)
IDD6.06.5mAOperating (1 MHz, VDD=3.3V, CL=0 pF, RL=, T=+25C)
Output Startup TimetSU1.01.3msT = +25C
Output Disable TimetDA20100ns
Output Duty CycleSYM4555%
Input Logic Level HighVIH0.75 x VDDV
Input Logic Level LowVIL0.25 x VDDVVDD = 1.8V
Output Current DriveCL15pFDSC1001
CL25pFDSC1003
CL40pFDSC1004
ZLR > 10 k, C 15Recommended Operating Conditions
Output Logic Level HighVOH0.8 x VDDV6 mA, DSC1004, CL = 40 pF (VDD=1.8V, TA=+85C)
VOH0.8 x VDDV6 mA, DSC1003, CL = 25 pF (VDD=1.8V, TA=+85C)
VOH0.8 x VDDV4 mA, DSC1001, CL = 15 pF (VDD=1.8V, TA=+85C)
VOH0.9 x VDDV6 mA, DSC1004, CL = 40 pF (VDD=2.5V, TA=+85C)
VOH0.8 x VDDV6 mA, DSC1003, CL = 25 pF (VDD=2.5V, TA=+85C)
VOH0.8 x VDDV4 mA, DSC1001, CL = 15 pF (VDD=2.5V, TA=+85C)
VOH0.9 x VDDV8 mA, DSC1004, CL = 40 pF (VDD=3.3V, TA=+85C)
VOH0.9 x VDDV6 mA, DSC1003, CL = 25 pF (VDD=3.3V, TA=+85C)
VOH0.8 x VDDV4 mA, DSC1001, CL = 15 pF (VDD=3.3V, TA=+85C)
Output Logic Level LowVOL0.2 x VDDV6 mA, DSC1004, CL = 40 pF (VDD=1.8V, TA=+85C)
VOL0.2 x VDDV6 mA, DSC1003, CL = 25 pF (VDD=1.8V, TA=+85C)
VOL0.2 x VDDV4 mA, DSC1001, CL = 15 pF (VDD=1.8V, TA=+85C)
VOL0.1 x VDDV6 mA, DSC1004, CL = 40 pF (VDD=2.5V, TA=+85C)
VOL0.2 x VDDV6 mA, DSC1003, CL = 25 pF (VDD=2.5V, TA=+85C)
VOL0.2 x VDDV4 mA, DSC1001, CL = 15 pF (VDD=2.5V, TA=+85C)
VOL0.1 x VDDV8 mA, DSC1004, CL = 40 pF (VDD=3.3V, TA=+85C)
VOL0.1 x VDDV6 mA, DSC1003, CL = 25 pF (VDD=3.3V, TA=+85C)
VOL0.2 x VDDV4 mA, DSC1001, CL = 15 pF (VDD=3.3V, TA=+85C)
Output Transition Rise TimetR1.43.0nsDSC1001, CL = 15 pF, T = +25C, 20% to 80%
tR1.53.0nsDSC1003, CL = 25 pF, T = +25C, 20% to 80%
tR1.83.0nsDSC1004, C2 = 40 pF, T = +25C, 20% to 80%
tR1.02.0nsDSC1001, CL = 15 pF, T = +25C, 20% to 80% (VDD=2.5V)
tR1.12.0nsDSC1003, CL = 25 pF, T = +25C, 20% to 80% (VDD=2.5V)
tR1.22.0nsDSC1004, C2 = 40 pF, T = +25C, 20% to 80% (VDD=2.5V)
tR1.02.0nsDSC1001, CL = 15 pF, T = +25C, 20% to 80% (VDD=3.3V)
tR1.12.0nsDSC1003, CL = 25 pF, T = +25C, 20% to 80% (VDD=3.3V)
tR1.22.0nsDSC1004, C2 = 40 pF, T = +25C, 20% to 80% (VDD=3.3V)
Output Transition Fall TimetF1.03.0nsDSC1001, CL = 15 pF, T = +25C, 20% to 80%
tF1.13.0nsDSC1003, CL = 25 pF, T = +25C, 20% to 80%
tF1.23.0nsDSC1004, C2 = 40 pF, T = +25C, 20% to 80%
tF0.92.0nsDSC1001, CL = 15 pF, T = +25C, 20% to 80% (VDD=2.5V)
tF1.02.0nsDSC1003, CL = 25 pF, T = +25C, 20% to 80% (VDD=2.5V)
tF1.12.0nsDSC1004, C2 = 40 pF, T = +25C, 20% to 80% (VDD=2.5V)
tF0.92.0nsDSC1001, CL = 15 pF, T = +25C, 20% to 80% (VDD=3.3V)
tF1.02.0nsDSC1003, CL = 25 pF, T = +25C, 20% to 80% (VDD=3.3V)
tF1.12.0nsDSC1004, C2 = 40 pF, T = +25C, 20% to 80% (VDD=3.3V)
JitterJCC60psMax. Cycle-to-Cycle, f = 100 MHz (Note 2)
JP1015psRMSPeriod Jitter, f = 100 MHz (Note 2)
Jitter (VDD=2.5V)JCC50psMax. Cycle-to-Cycle, f = 100 MHz (Note 2)
Jitter (VDD=2.5V)JP510psRMSPeriod Jitter, f = 100 MHz (Note 2)
Jitter (VDD=3.3V)JCC50psMax. Cycle-to-Cycle, f = 100 MHz (Note 2)
Jitter (VDD=3.3V)JP510psRMSPeriod Jitter, f = 100 MHz (Note 2)
Storage Temperature RangeTA55+150C
Soldering Temperature RangeTS+260C40 sec. max

2411041601_MICROCHIP-DSC1001CI5-026-0000_C611426.pdf

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