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quality silicon MEMS CMOS oscillator MICROCHIP DSC1001DI1-025.0000T with wide frequency range and stability factory
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quality silicon MEMS CMOS oscillator MICROCHIP DSC1001DI1-025.0000T with wide frequency range and stability factory
>
Specifications
Operating Temperature:
-40℃~+85℃
Current - Supply:
6.3mA
Output Type:
CMOS
Voltage - Supply:
1.8V~3.3V
Frequency Stability:
±50ppm
Frequency:
25MHz
Mfr. Part #:
DSC1001DI1-025.0000T
Package:
SMD2520-4P
Key Attributes
Model Number: DSC1001DI1-025.0000T
Product Description

Product Overview

The DSC1001/3/4 is a silicon MEMS-based CMOS oscillator family offering excellent jitter and stability over a wide range of supply voltages and temperatures. Its crystal-less design provides enhanced reliability, making it ideal for rugged, industrial, and portable applications. Available in industry-standard packages, it serves as a pin-for-pin replacement for standard crystal oscillators.

Product Attributes

  • Brand: Microchip Technology Inc.
  • Material: Silicon MEMS
  • Certifications: Pb Free, RoHS, Reach SVHC Compliant, AEC-Q100 Reliability Qualified

Technical Specifications

ParameterSymbolMinTypMaxUnitsConditions
Frequency RangeF01-150MHzSingle Frequency
f--10ppm10 ppm, 20 ppm, 25 ppm, 50 ppm (Stability over Temperature)
f--5ppm1 year @ +25C (Aging)
F01-150MHz1 MHz to 150 MHz
Operating VoltageVDD1.7-3.6VRecommended Operating Conditions
VDD1.8-3.3VElectrical Characteristics (VDD = 1.8 to 3.3V)
VIN-0.3-VDD + 0.3VAbsolute Maximum Ratings
Operating Temperature RangeTA-40-105CExt. Industrial
TA-40-85CIndustrial (Ordering Option L)
TA-20-70CCommercial (Ordering Option E)
Supply Current, StandbyIDD--15AMax., T = +25C
IDD--15AStandby (Max.)
Supply Current, Operating (No Load)IDD-6.06.3mA1 MHz, CL = 0 pF, RL = , T = +25C, VDD = 1.8V
IDD-6.06.4mA1 MHz, CL = 0 pF, RL = , T = +25C, VDD = 2.5V
IDD-6.06.5mA1 MHz, CL = 0 pF, RL = , T = +25C, VDD = 3.3V
Output Startup TimetSU-1.01.3msT = +25C
tSU-1.01.3msTime to stable output frequency after VDD is applied
tSU-1.01.3mstSU and tEN (after EN is asserted) are identical values
Output Disable TimetDA-20100ns-
tDA-20100ns-
Output Duty CycleSYM45-55%-
SYM45-55%-
Input Logic Level HighVIH0.75 x VDD--V-
VIH0.75 x VDD--V-
Input Logic Level LowVIL--0.25 x VDDV-
VIL--0.25 x VDDV-
Output Logic Level HighVOH0.8 x VDD--V6 mA, DSC1004, CL = 40 pF, VDD = 1.8V
VOH0.8 x VDD--V6 mA, DSC1003, CL = 25 pF, VDD = 1.8V
VOH0.8 x VDD--V4 mA, DSC1001, CL = 15 pF, VDD = 1.8V
VOH0.9 x VDD--V8 mA, DSC1004, CL = 40 pF, VDD = 3.3V
VOH0.9 x VDD--V6 mA, DSC1003, CL = 25 pF, VDD = 3.3V
VOH0.8 x VDD--V4 mA, DSC1001, CL = 15 pF, VDD = 3.3V
Output Logic Level LowVOL--0.2 x VDDV6 mA, DSC1004, CL = 40 pF, VDD = 1.8V
VOL--0.2 x VDDV6 mA, DSC1003, CL = 25 pF, VDD = 1.8V
VOL--0.2 x VDDV4 mA, DSC1001, CL = 15 pF, VDD = 1.8V
VOL--0.1 x VDDV8 mA, DSC1004, CL = 40 pF, VDD = 3.3V
VOL--0.1 x VDDV6 mA, DSC1003, CL = 25 pF, VDD = 3.3V
VOL--0.2 x VDDV4 mA, DSC1001, CL = 15 pF, VDD = 3.3V
Output Transition Rise TimetR-1.43.0nsDSC1001, CL = 15 pF, T = +25C, 20% to 80%, VDD = 1.8V
tR-1.53.0nsDSC1003, CL = 25 pF, T = +25C, 20% to 80%, VDD = 1.8V
tR-1.83.0nsDSC1004, C2 = 40 pF, T = +25C, 20% to 80%, VDD = 1.8V
tR-1.02.0nsDSC1001, CL = 15 pF, T = +25C, 20% to 80%, VDD = 2.5V
tR-1.12.0nsDSC1003, CL = 25 pF, T = +25C, 20% to 80%, VDD = 2.5V
tR-1.22.0nsDSC1004, C2 = 40 pF, T = +25C, 20% to 80%, VDD = 2.5V
tR-1.02.0nsDSC1001, CL = 15 pF, T = +25C, 20% to 80%, VDD = 3.3V
tR-1.12.0nsDSC1003, CL = 25 pF, T = +25C, 20% to 80%, VDD = 3.3V
tR-1.22.0nsDSC1004, C2 = 40 pF, T = +25C, 20% to 80%, VDD = 3.3V
tR-1.43.0nsDSC1001, CL = 15 pF, T = +25C, 20% to 80%
tR-1.53.0nsDSC1003, CL = 25 pF, T = +25C, 20% to 80%
tR-1.83.0nsDSC1004, C2 = 40 pF, T = +25C, 20% to 80%
Output Transition Fall TimetF-1.03.0nsDSC1001, CL = 15 pF, T = +25C, 20% to 80%, VDD = 1.8V
tF-1.13.0nsDSC1003, CL = 25 pF, T = +25C, 20% to 80%, VDD = 1.8V
tF-1.23.0nsDSC1004, C2 = 40 pF, T = +25C, 20% to 80%, VDD = 1.8V
tF-0.92.0nsDSC1001, CL = 15 pF, T = +25C, 20% to 80%, VDD = 2.5V
tF-1.02.0nsDSC1003, CL = 25 pF, T = +25C, 20% to 80%, VDD = 2.5V
tF-1.12.0nsDSC1004, C2 = 40 pF, T = +25C, 20% to 80%, VDD = 2.5V
tF-0.92.0nsDSC1001, CL = 15 pF, T = +25C, 20% to 80%, VDD = 3.3V
tF-1.02.0nsDSC1003, CL = 25 pF, T = +25C, 20% to 80%, VDD = 3.3V
tF-1.12.0nsDSC1004, C2 = 40 pF, T = +25C, 20% to 80%, VDD = 3.3V
tF-1.03.0nsDSC1001, CL = 15 pF, T = +25C, 20% to 80%
tF-1.13.0nsDSC1003, CL = 25 pF, T = +25C, 20% to 80%
tF-1.23.0nsDSC1004, C2 = 40 pF, T = +25C, 20% to 80%
Jitter, Max. Cycle-to-CycleJCC-60-psf = 100 MHz (Note 2), VDD = 1.8V
JCC-50-psf = 100 MHz (Note 2), VDD = 2.5V
JCC-50-psf = 100 MHz (Note 2), VDD = 3.3V
JCC-60-psf = 100 MHz (Note 2)
Period JitterJP-1015psRMSf = 100 MHz (Note 2), VDD = 1.8V
JP-510psRMSf = 100 MHz (Note 2), VDD = 2.5V
JP-510psRMSf = 100 MHz (Note 2), VDD = 3.3V
JP-1015psRMSf = 100 MHz (Note 2)
Ultra Miniature Footprint-2.5 mm x 2.0 mm x 0.85 mm--mm-
-3.2 mm x 2.5 mm x 0.85 mm--mm-
-5.0 mm x 3.2 mm x 0.85 mm--mm-
-7.0 mm x 5.0 mm x 0.85 mm--mm-
ESD Protection-4 kV HBM, 200V MM, 1.5 kV CDM----
Storage Temperature RangeTA-55-150C-
Soldering Temperature RangeTS--260C40 sec. max

2210180900_MICROCHIP-DSC1001DI1-025-0000T_C611720.pdf

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