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quality Silicon MEMS CMOS Oscillator MICROCHIP DSC1001DE1-100.0000 Suitable for Rugged Portable Industrial factory
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quality Silicon MEMS CMOS Oscillator MICROCHIP DSC1001DE1-100.0000 Suitable for Rugged Portable Industrial factory
quality Silicon MEMS CMOS Oscillator MICROCHIP DSC1001DE1-100.0000 Suitable for Rugged Portable Industrial factory
quality Silicon MEMS CMOS Oscillator MICROCHIP DSC1001DE1-100.0000 Suitable for Rugged Portable Industrial factory
>
Specifications
Voltage - Supply:
1.8V~3.3V
Frequency Stability:
±50ppm
Mfr. Part #:
DSC1001DE1-100.0000
Package:
SMD2520-4P
Key Attributes
Model Number: DSC1001DE1-100.0000
Product Description

Product Overview

The DSC1001/3/4 is a silicon MEMS-based CMOS oscillator family offering excellent jitter and stability over a wide range of supply voltages and temperatures. Its crystal-less design provides high reliability, making it suitable for rugged, industrial, and portable applications. Available in industry-standard packages, it offers a pin-for-pin "drop-in" replacement for standard crystal oscillators, leading to reduced power consumption and longer battery life.

Product Attributes

  • Brand: Microchip Technology Inc.
  • Certifications: MIL-STD 883 Shock and Vibration Resistant, Pb Free, RoHS, Reach SVHC Compliant, AEC-Q100 Reliability Qualified

Technical Specifications

ParameterSymbolMin.Typ.Max.UnitsConditions
Frequency RangeF01150MHzSingle Frequency
Frequency Tolerancef10ppmIncludes frequency variations due to initial tolerance, temperature and power supply voltage
20ppm
25ppm
50ppm
Agingf5ppm1 year @ +25C
Operating VoltageVDD1.73.6VRecommended Operating Conditions
1.83.3VElectrical Characteristics
1.83.3VElectrical Characteristics (VDD = 1.8 to 3.3V; TA = +85C)
1.83.3VElectrical Characteristics (VDD = 1.8 to 3.3V; TA = +85C)
1.83.3VElectrical Characteristics (VDD = 1.8 to 3.3V; TA = +85C)
Operating Temperature RangeTA40+105COrdering Option L
40+85COrdering Option I
20+70COrdering Option E
Standby CurrentIDD15AT = +25C
Operating Current (1 MHz)IDD66.3mAVDD = 1.8V, CL = 0 pF, RL = , T = +25C
Operating Current (150 MHz)IDD8.311.9mAVDD = 1.8V, CL = 0 pF, RL = , T = +25C
Output Startup TimetSU1.01.3msT = +25C
Output Disable TimetDA20100ns
Output Duty CycleSYM4555%
Input Logic Level HighVIH0.75 x VDDV
Input Logic Level LowVIL0.25 x VDDV
Output Logic Level High (DSC1001, CL=15pF)VOH0.8 x VDDV4 mA, VDD = 1.8V
Output Logic Level Low (DSC1001, CL=15pF)VOL0.2 x VDDV4 mA, VDD = 1.8V
Output Transition Rise Time (DSC1001, CL=15pF)tR1.43.0nsT = +25C, 20% to 80%
Output Transition Fall Time (DSC1001, CL=15pF)tF1.03.0nsT = +25C, 20% to 80%
Max. Cycle-to-Cycle JitterJCC60psf = 100 MHz
Period Jitter RMSJP1015psRMSf = 100 MHz
Package Dimensions2.5 x 2.0 x 0.853.2 x 2.5 x 0.855.0 x 3.2 x 0.85mmUltra Miniature Footprint
Package Dimensions7.0 x 5.0 x 0.85mmUltra Miniature Footprint

2411041600_MICROCHIP-DSC1001DE1-100-0000_C1671612.pdf

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