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quality Durable Chip Resistors Thick Film Type LIZ CR2010F22203G with Nickel Barrier Layer and Epoxy Marking factory
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quality Durable Chip Resistors Thick Film Type LIZ CR2010F22203G with Nickel Barrier Layer and Epoxy Marking factory
>
Specifications
Power(Watts):
750mW
Resistance:
220kΩ
Voltage Rating:
200V
Temperature Coefficient:
±100ppm/℃
Operating Temperature:
-55℃~+125℃
Type:
Thick Film Resistor
Tolerance:
±1%
Mfr. Part #:
CR2010F22203G
Package:
2010
Key Attributes
Model Number: CR2010F22203G
Product Description

Thick Film Chip Resistors - Type CR

This specification prescribes lead-free thick film chip resistors for use in electronic systems.

Product Attributes

  • Brand: (Not specified)
  • Origin: (Not specified)
  • Material: Ceramic Substrate (Al2O3), Conductive layer (Ag), Side conductive layer (NiCr), Resistive layer (RuO2 + glass), Inner protective layer (Glass), Protective layer (Epoxy), Marking (Epoxy), Termination barrier layer (Ni), Termination layer (Matte Tin)
  • Color: (Not specified)
  • Certifications: (Not specified)

Technical Specifications

TypeRated Power at 70Max. Working VoltageMax. Overload VoltageResistance Range (ohm)Tolerance (%)T.C.R (ppm/)Max. Rated CurrentDimensions (mm) L x W x TConstruction Materials
CR02011/20W25V50V1~10M (E96/E24)0.5% (D), 1% (F), 2% (G), 5% (J), 10% (K), 20% (M)250 (for >25), +500-250 (for 1~25)0.5A0.600.03 x 0.300.03 x 0.230.03Ceramic substrate, Conductive layer, Side conductive layer, Resistive layer, Inner protective layer, Protective layer, Marking, Termination barrier layer, Termination layer
CR04021/16W50V100V1~22M (E96/E24)0.5% (D), 1% (F), 2% (G), 5% (J), 10% (K), 20% (M)250 (for >25), +500-250 (for 1~25)1A1.000.05 x 0.500.05 x 0.350.05Ceramic substrate, Conductive layer, Side conductive layer, Resistive layer, Inner protective layer, Protective layer, Marking, Termination barrier layer, Termination layer
CR06031/10W50V100V10~22M (E96/E24)0.5% (D), 1% (F), 2% (G), 5% (J), 10% (K), 20% (M)200 (for >10), +500-250 (for 1~10)1A1.600.15 x 0.800.10 x 0.450.10Ceramic substrate, Conductive layer, Side conductive layer, Resistive layer, Inner protective layer, Protective layer, Marking, Termination barrier layer, Termination layer
CR08051/8W150V300V10~22M (E96/E24)0.5% (D), 1% (F), 2% (G), 5% (J), 10% (K), 20% (M)200 (for >10), +500-250 (for 1~10)1.5A2.000.15 x 1.250.15 x 0.500.10Ceramic substrate, Conductive layer, Side conductive layer, Resistive layer, Inner protective layer, Protective layer, Marking, Termination barrier layer, Termination layer
CR12061/4W200V400V10~22M (E96/E24)0.5% (D), 1% (F), 2% (G), 5% (J), 10% (K), 20% (M)200 (for >10), +500-250 (for 1~10)1.9A3.100.15 x 1.600.15 x 0.550.10Ceramic substrate, Conductive layer, Side conductive layer, Resistive layer, Inner protective layer, Protective layer, Marking, Termination barrier layer, Termination layer
CR12101/3W200V400V10~22M (E96/E24)0.5% (D), 1% (F), 2% (G), 5% (J), 10% (K), 20% (M)200 (for >10), +500-250 (for 1~10)2.2A3.100.15 x 2.500.15 x 0.550.15Ceramic substrate, Conductive layer, Side conductive layer, Resistive layer, Inner protective layer, Protective layer, Marking, Termination barrier layer, Termination layer
CR20101/2W200V400V10~22M (E96/E24)0.5% (D), 1% (F), 2% (G), 5% (J), 10% (K), 20% (M)200 (for >10), +500-250 (for 1~10)3A5.000.20 x 2.500.20 x 0.550.15Ceramic substrate, Conductive layer, Side conductive layer, Resistive layer, Inner protective layer, Protective layer, Marking, Termination barrier layer, Termination layer
CR25121W200V400V10~10M (E96)0.5% (D), 1% (F), 2% (G), 5% (J), 10% (K), 20% (M)100 (for >10), +500-250 (for 1~10)3A6.250.20 x 3.100.20 x 0.550.15Ceramic substrate, Conductive layer, Side conductive layer, Resistive layer, Inner protective layer, Protective layer, Marking, Termination barrier layer, Termination layer
Jumper(See specific type)(See specific type)(See specific type)1~25(See specific type)(See specific type)(See specific type)(See specific type)(See specific type)

2410121258_LIZ-CR2010F22203G_C5154826.pdf

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