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quality Electronic system chip resistor LIZ CR2512F13001G with thick film and ceramic substrate construction factory
<
quality Electronic system chip resistor LIZ CR2512F13001G with thick film and ceramic substrate construction factory
>
Specifications
Power(Watts):
1W
Resistance:
3kΩ
Voltage Rating:
200V
Temperature Coefficient:
±100ppm/℃
Operating Temperature:
-55℃~+125℃
Type:
Thick Film Resistor
Tolerance:
±1%
Mfr. Part #:
CR2512F13001G
Package:
2512
Key Attributes
Model Number: CR2512F13001G
Product Description

Product Overview

This specification covers lead-free thick film chip resistors for use in electronic systems. These resistors are designed for reliable performance in various applications.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Ceramic Substrate (Al2O3), Conductive layer (Ag), Side conductive layer (NiCr), Resistive layer (RuO2 + glass), Inner protective layer (Glass), Protective layer (Epoxy), Marking (Epoxy), Termination barrier layer (Ni), Termination layer (Matte Tin)
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

TypeRated Power at 70Max. Working VoltageMax. Overload VoltageResistance Range (E96)Resistance Range (E24)ToleranceT.C.R (ppm/)Max. Rated Current (Jumper)
CR02011/20W25V50V25~10M1~250.5% (D), 1% (F), 2% (G), 5% (J), 10% (K), 20% (M)2500.5A
CR04021/16W50V100V10~10M1~100.5% (D), 1% (F), 2% (G), 5% (J), 10% (K), 20% (M)1001A
CR06031/10W50V100V10~10M1~100.5% (D), 1% (F), 2% (G), 5% (J), 10% (K), 20% (M)1001A
CR08051/8W150V300V10~10M1~100.5% (D), 1% (F), 2% (G), 5% (J), 10% (K), 20% (M)1001.5A
CR12061/4W200V400V10~10M1~100.5% (D), 1% (F), 2% (G), 5% (J), 10% (K), 20% (M)1001.9A
CR12101/3W200V400V10~10M1~100.5% (D), 1% (F), 2% (G), 5% (J), 10% (K), 20% (M)1002.2A
CR20101/2W200V400V10~10M1~100.5% (D), 1% (F), 2% (G), 5% (J), 10% (K), 20% (M)1003A
CR25121W200V400V10~10M1~100.5% (D), 1% (F), 2% (G), 5% (J), 10% (K), 20% (M)1003A
JumperN/AN/AN/A1~251~25N/A500-250N/A

2410121258_LIZ-CR2512F13001G_C5154593.pdf

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