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Quality 33.333 MHz frequency oscillator HELE SSW033333I3CHE-T optimized for electronic component integration factory
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Quality 33.333 MHz frequency oscillator HELE SSW033333I3CHE-T optimized for electronic component integration factory
>
Specifications
Frequency Stability:
±50ppm
Voltage - Supply:
3V~3.6V
Operating Temperature:
-40℃~+85℃
Frequency:
33.333MHz
Mfr. Part #:
SSW033333I3CHE-T
Package:
SMD3225-4P
Key Attributes
Model Number: SSW033333I3CHE-T
Product Description

Harmony Electronics HSO321S Oscillator

The Harmony Electronics HSO321S is a high-quality oscillator designed for various electronic applications. It offers precise frequency output and reliable performance, making it suitable for integration into a wide range of products. This specification document outlines the key electrical, mechanical, and environmental characteristics of the HSO321S, ensuring its compatibility and optimal use in demanding environments.

Product Attributes

  • Brand: HARMONY ELECTRONICS CORP.
  • Model: HSO321S
  • Type: Oscillator
  • Country of Origin: TAIWAN
  • Manufacturing Date: 2016/01/05
  • Specification Number: SSW033333I3CHE-T
  • Revision: 0

Technical Specifications

Item Symbol Value Unit Condition Min Typ Max Notes
1. Type
Type Name HSO321S
2. Output Frequency
Output Frequency 33.333000 MHz
3. Absolute Maximum Ratings
Vdd terminal voltage Vdd -0.5 to 4.0 V
Input terminal voltage Vcont -0.5 to Vdd+0.5 V
Output terminal voltage Vout -0.5 to Vdd+0.5 V
Output terminal current Iout mA 15
Storage temp. range Tstr -55 to 125 deg.C
4. Electric Specifications
Frequency Stability f/F -50 to +50 ppm 3.3+/- 0.3V, -40~85 Inclusive of 25 Tolerance, operating temperature range, input voltage change, Load change, first of aging, shock and vibration.
Operating temp. range Topr -40 to +85 25
Supply voltage Vdd 3.0 to 3.6 V 3.3
Current consumption 1 Idd1 mA Pin #1: open or "H", 3.3V 25+/-3 10 Fig1,2
Current consumption 2 Idd2 mA Pin #1: "L" level, 3.3V 25+/-3 0.01 Fig1,2
Symmetry Duty 40 to 60 % CL =15pF 50
Low level output voltage Vol V CL =15pF 0.1xVdd
High level output voltage Voh V CL =15pF 0.9xVdd
Rise & Fall time Tr & Tf ns CL =15pF 7
Low level input current Iil uA 3.3V 25+/-3 10 Fig3
High Level input current Iih uA 3.3V 25+/-3 10 Fig3
Low level input voltage Vil V Vddx0.3
High level input voltage Vih V Vddx0.7
Output disable time Tplz nsec 150
Output enable time Tpzl msec 10
Aging -3 to +3 ppm/year
Start-up time ms 10
5. Dimensions
Length 24.0 mm Max.
Width 3.2 +/- 0.2 mm
Height 2.5 +/- 0.2 mm
Pin Connections 1: Output, 2: GND, 3: OE (Output Enable), 4: Vdd TOP VIEW
6. Inside Structure
Base Material Alumina Ceramic (Al2O3)
Metalized Pad W Ni Plating, Au Plating
IC IC (Si. Al.)
Bonding Wire Au
Crystal Blank Rectangular At-Cut Quartz Crystal Blank
LID Fe+Ni+Co
Adhesive Silver Conductive Silicon Resin
Electrode The use prohibition chemistry substance of Table 1 of DHE-0204-1 (HE-QA-24) is not included.
7. Mechanical Performance
Natural Drop Drop 3 times from 50cm onto min. 30mm thickness hard wooden board. JIS C 60068-2-6 A
Vibration 10-55Hz, Sine Wave, 0.8mm amplitude to X, Y, Z axes, 2 hours per axis. MIL-HDBK-781A 6.5.2/ JIS C 60068-2-6 A
Sealing Tightness (Fine Leakage) Leak Rate 1.0x10-8 Pa-m3/sec. Max. (Helium leak detector)
Sealing Tightness (Coarse Leakage) No gas bubble observed after dipping in FC-40 at +125 +/-5deg.C for 5 minutes.
Solder ability Dipping in solder bath at 245deg.C+/-5deg.C for 3+/-0.5 sec after applying ROSIN Flux. JIS C 60068-2-20 B
8. Environment Performance
Humidity 60+/-2, RH 90~95%, 240 hours. JIS C 60068-2-3 A Component checked after returning to room temperature.
Storage in Low Temperature -40deg.C +/-2deg.C, 240 hours. JIS C 60068-2-1 A Component checked after returning to room temperature.
Storage in High Temperature +85deg.C +/-2deg.C, 240 hours. JIS C 60068-2-2 A Component checked after returning to room temperature.
Temperature cycles -30deg.C +/-2deg.C (30min) +80deg.C +/-2deg.C (30min), 25 cycles. Temp. increasing/reducing time within 3 minutes. JIS C 0025 A Component checked after returning to room temperature.
High Temperature Operation +85deg.C +/-2deg.C, +3.3V Vdd, 240 hours. JIS C 60068-2-2 A Component checked after returning to room temperature. Specifications A: Frequency variation within +/-5ppm, equivalent resistance within spec. B: More than 90% of lead covered by new solder.
9. Supplement
Reflow Condition Proposed reflow condition, max 2 soldering times.
Solder Iron Bit temp.: 350deg.C Max., Time: 3sec Max., Each terminal solder 1 time Max.
Mounting Designed for automatic insertion. Trial with insertion machine recommended. Avoid mounting by Ultrasonic welding.
Cleaning Do not use cleaning liquid that corrodes Nickel. Ultrasonic cleaning possible, check on your board.
Handling Pay attention to static-electricity. Crystal blank may break if excess force is applied.
By-pass Capacitor No integrated by-pass capacitor. Recommend using 0.01F ceramic chip capacitor between Vdd and GND.
Storage Keep away from high temperature, high humidity, direct sunlight, and dew.
10. Taping and Packing
Emboss Tape Specifications Refer to detailed drawings.
Reel Specifications Flange Diameter: 180+/-3mm, Inner Width: 9.3+/-0.3mm, Outer Width: 11.3+/-1.0mm, Hub Out Line diameter: 60.5+/-0.5mm. Table-2 (UNIT: mm)
Storage (Taping) Temperature +40deg.C Max., Humidity 80% Max.
Quantity on Reel 3,000 PCS/REEL
11. Flow Chart
Manufacturing Process Incoming Inspection, Etching, Freq. Sorting, Washing, Plating, Assembly, Curing, Adjustment, Annealing, Sealing, Aging, Marking, Packing, Inspection. Includes various checks like Middle Check, Final Check, DLD Check, Temp. Characteristics Check, Leak Checks.
12. Environmental Workload Chemical Substance Components List
Chemical Substance Percentage mg ppm For D(H)SO321S
WOLFRAM AND ITS COMPOUND(W) 0.21168 25.2 53.3434
COBALT AND ITS COMPOUND(Co) 0.96900 244.1880
CHROMIUM AND ITS COMPOUND(Cr) 0.07308 18.4162
SILVER(Ag) 0.15876 40.0075
COPPER(Cu) 0.07812 19.6862
NICKEL AND ITS COMPOUND(Ni) 2.26044 569.6309
MANGANESE AND ITS COMPOUND(Mn) 0.02016 5.0803
MOLYBDENUM AND ITS COMPOUND(Mo) 0.12348 31.1170
SILICON AND ITS COMPOUND(Si) 0.28476 71.7595
ALUMINIUM AND ITS COMPOUND(Al) 7.96320 2006.7264
GOLD(Au) 0.15372 38.7374
IRON(Fe) 3.37176 849.6835

2410121327_HELE-SSW033333I3CHE-T_C253916.pdf

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