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Quality Frequency Stable Crystal Oscillator HELE SSW008000I3CHE-T 8 MHz Pb Free RoHS Compliant Electronic Part factory
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Quality Frequency Stable Crystal Oscillator HELE SSW008000I3CHE-T 8 MHz Pb Free RoHS Compliant Electronic Part factory
>
Specifications
Frequency Stability:
±50ppm
Voltage - Supply:
3V~3.6V
Operating Temperature:
-40℃~+85℃
Frequency:
8MHz
Mfr. Part #:
SSW008000I3CHE-T
Package:
SMD3225-4P
Key Attributes
Model Number: SSW008000I3CHE-T
Product Description

Product Overview

The Harmony Electronics HSO321S is a Crystal Oscillator designed for reliable performance. It operates at a nominal frequency of 8.000000MHz and is Pb-free, RoHS 2.0, HF-Halogen free, and REACH Compliant. This product is suitable for various electronic applications requiring stable frequency output.

Product Attributes

  • Brand: HARMONY ELECTRONICS CORPORATION
  • Product Type: Crystal Oscillator
  • Model: HSO321S
  • Part Number (H.ELE. P/N): SSW008000I3CHE-T
  • Sample O/N: EOS-J70469-1
  • Release Date: 2019/08/01
  • MSL Level: 1
  • Product Standards: Pb free, RoHS 2.0, HF-Halogen free, REACH Compliant
  • Country of Origin: Kaohsiung, Taiwan; Shenzhen, China; Dongguan, China; Ratchaburi, Thailand

Technical Specifications

Item Symbol Electrical Spec. Unit Condition
Electrical Specifications FL 8.000000 MHz Output Frequency
f/F -50 to +50 ppm Frequency Stability @3.30.3V/-40~85
Topr -40 to +85 Operating temp. range
Vdd 3.0 to 3.6 V Supply voltage
CL 15 pF Output load (C-MOS)
Idd1 - to 10 mA Current consumption 1 (#1 pin: open or "H") @3.3V/ 253
Idd2 - to 0.01 mA Current consumption 2 (#1 pin: "L" level)
Vol - to 0.1xVdd V Low level output voltage
Voh 0.9xVdd to - V High level output voltage
Duty 40 to 60 % Symmetry
Tr & Tf - to 7 ns Rise & Fall time
Iil - to 10 uA Low level input current
Iih - to 10 uA High Level input current
Vil - to Vddx0.3 V Low level input voltage
Vih Vddx0.7 to - V High level input voltage
Tplz - to 150 nsec Output disable time
Tpzl - to 10 msec Output enable time
Aging -3 to 3 ppm/year Aging
Start-up time - to 10 ms Start-up time
Jitter, Phase RMS(1-) - to 1 ps 12KHz~20MHz Frequency Band
Absolute Maximum Ratings Vdd -0.5 ~ 4.0 V Vdd terminal voltage
Vcont -0.5 ~ Vdd+0.5 V Input terminal voltage
Vout -0.5 ~ Vdd+0.5 V Output terminal voltage
Iout 15 mA Output terminal current
Tstr -55 ~ 125 deg.C Storage temp. range
Mechanical Performance Shock Refer to: JIS C 60068-2-32 A Dropping from 50 cm height 3 times on 30mm Concrete Floor.
Vibration Refer to: JIS C 60068-2-6/MIL-HDBK-781A 6.5.2 A Frequency 10-55Hz, Sine Wave full amplitude of 0.8mm to X, Y and Z 3 axes, Duration of 2 hours to each axis.
Leakage Test Refer to: JIS C 60068-2-17 A Leak Rate 1.0x10-9 Pa-m3/sec. Max. Measured by Helium leak detector.
Solder ability Refer to: JIS C 60068-2-20/C 60068-2-58 B After applying ROSIN Flux, dipping in solder bath at 245deg.C +/- 5deg.C for 3+/-0.5 sec.
Environmental Performance Resistance of Soldering Heat Refer to: JIS C 60068-2-58 A Performing as the following reflow.
Humidity Refer to: JIS C 60068-2-3 A Temperature 60+/-2, RH 90~95%, Duration of 240 hours. Back to the room temperature first, then check the component after 1~2 hours.
Storage in Low Temperature Refer to: JIS C 60068-2-1 A -40deg.C +/-2deg.C, Duration of 240 hours. Back to the room temperature first, then check the component after 1~2 hours.
Storage in High Temperature Refer to: JIS C 60068-2-2 A +85deg.C +/-2deg.C, Duration of 240 hours. Back to the room temperature first, then check the component after 1~2 hours.
Thermal shock Refer to: JIS C 0025 A -40deg.C +/-2deg.C (30min) +85deg.C +/-2deg.C (30min) 25 cycles. And Temperature Increasing/reducing time3mins. Back to the room temperature first, then check the component after 1~2 hours.
Dimensions 3.20.2 x 2.50.2 mm
Pin Connections 1: Vdd, 2: GND, 3: OE(Output Enable), 4: Output
Marking Laser marking Date Code: Year (0-9), Month (A-M)
Inside Structure Components Base-Ceramic, Lid, Kovar, Crystal Blank, Electrode, Connective Adhesive, Bonding Wire, IC, Pad Material: Ceramic Al2O3, Fe-Ni-Co, Metal SiO2, Silver Powder Ag, Au, Si, Ni-Plating, Au-Plating
Reflow Condition Preheat: 160~180deg.C (120 sec), Primary heat: >=220 deg.C (10020 sec), Peak: 2605 deg.C (10 sec Max.) Soldering within 2 times recommended.
Manual Solder iron Bit temp.: 350 max., Time: 3sec max. Each terminal only should be soldered once.
Storage Conditions Environmental Temperature: +40 degrees Celsius Maximum, Relative Humidity: 80% Maximum Keep in clean dust-free environment out of direct sunlight.
Carrier Tape Material Carrier tape: PS, Conductive Top tape: PET
Standard Packing Quantity 3,000PCS / REEL
Release strength of cover tape 0.1N to 0.7N N Pulling direction: 165 to 180, Speed: 300mm/min.

2411121056_HELE-SSW008000I3CHE-T_C253918.pdf

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