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quality Ultra small seam sealed SMD crystal oscillator CHANGXING ELECTRONICS 3ESC120C0033L with CMOS output factory
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quality Ultra small seam sealed SMD crystal oscillator CHANGXING ELECTRONICS 3ESC120C0033L with CMOS output factory
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Specifications
Normal temperature Frequency Tolerance:
±10ppm
Voltage - Supply:
1.8V~3.3V
Operating Temperature:
-40℃~+85℃
Frequency:
12MHz
Mfr. Part #:
3ESC120C0033L
Package:
SMD2016-4P
Key Attributes
Model Number: 3ESC120C0033L
Product Description

Product Overview

The CHANGXING ELECTRONICS CO.,LTD. 3E Series 2.0x1.6 SMD Crystal Oscillator (Model: 3ESC120C0033L) is an ultra-small, seam-sealed clock crystal oscillator unit designed for applications in WLAN, Bluetooth, DSC, DSL, and other IT products. It features a CMOS output and an optional tri-state function, making it a versatile component for modern electronic devices. This RoHS Compliant and Pb Free oscillator offers a nominal frequency of 12.000000MHz.

Product Attributes

  • Brand: CHANGXING ELECTRONICS CO.,LTD.
  • Product Line: 3E Series
  • Type: SMD Crystal Oscillator
  • Output Type: CMOS Output
  • Sealing: Seam sealed
  • Compliance: RoHS Compliant / Pb Free
  • Origin: Fujian Province, China

Technical Specifications

Specification Value Unit Notes
Nominal Frequency 12.000000 MHz
Tolerance @ 25 Degree 10 ppm
Stability over Operation Temp. 20 ppm
Aging 3 ppm/year
Operating Temperature Range -40 to 85
Storage Temperature Range -55 to 125
Input Voltage (VDD) 1.83.3 Vdc
Input Current (IDD) 5 mA max
Standby current 10 A max
Output State Control Enable/disable Tri-state function available
Rise/Fall Time 5010% ns max @ 10%VDD to 90%VDD
Output Voltage VOL 10%VDD
Output Voltage VOH 90%VDD
Output Load 15 pF max
Output Waveform COMS
Output Symmetry 5010%
Start-up Time 12 ms max
Jitter (rms) 5 ps max
Fundamental Oscillation mode 3
MSL Level 1
Dimensions 2.0 x 1.6 x 0.75 mm
Product Number 3ESC120C0033L
Model 2.0x1.6 OSC 12.000000MHz
Product Weight 8.144 mg

Marking

The marking includes: Changxing Electronics LOGO, Nominal Frequency (MHz), Line Code, Last three digits of Production Batch Code, Year-Month Code.

Reflow Condition

Temperature profile for reflow soldering:
Pre-heating zone 1: 150180, 9030s.
Soldering zone: 230 or more, 3010s.
Peak: 250+50.

Soldering iron method:
Bit temperature: 35010.
Application time of soldering iron: 3+1 s.

Packing

EIA-481-2 standard packing (TAPE (CARRIER) DIMENSIONS).

Reliability Specifications

Item Test Method Specification Notes
High Temperature Storage GB/T 2423.2-2001, MethodBa Frequency change after test5ppm 72 hrs at 125C3C constant temperature. Measurement taken after DUT being left at room temperature for 242 hours.
Low Temperature Storage GB/T 2423.1-2001, MethodAa Frequency change after test5ppm 72 hrs at -55C3C constant temperature. Measurement taken after DUT being left at room temperature for 242 hours.
Humidity GB/T 2423.3-2006, Method Cab Frequency change after test5ppm 96 hrs at 40 C 3 C, with 90 3% R.H. Measurement taken after DUT being left at room temperature for 242 hours.
Temperature Cycle GB/T2423.22-2002, Method Nb Frequency change after test5ppm 10 cycles from -25C to 85C. Measurement taken after DUT being left at room temperature for 242 hours.
Shock GB/T 2423.5-1995, Method Ea Frequency change after test5ppm Peak 1000m/s2, normal width 6ms half sine wave form, 3.7m/s, 3 perpendicular axis of samples, 3 cycles /direction, total 18 cycles. Measurement taken after 1 hour.
Drop GB/T 2423.8-1995, Method Ed Frequency change after test5ppm Free drop to the wooden plate from 1.0 m heights for 3 times.
Vibration GB/T 2423.10-1995, Method Fc Frequency change after test5ppm Apply 0.75mm vibration at sweep frequency 10500 Hz, for 2h. 10 cycles in each direction of 3 axis. Measurement taken after 1 hour.
Resistance to Soldering Heat GB/T 2423.28-2005, Test Tb Method 1B Frequency change after test5ppm. No visible damages. In 255 5 solder bath for 2 0.5 seconds.
Solderability GB/T 2423.28-2005, Method Tc Terminals shall be covered more then 95% with solder. No visible damage. Passed through the re-flow oven under the following condition. Preheat to 150 C5C for 60 to 120sec, and peak 265 C5C for 10s3sec. Measurement taken after DUT being left at room temperature for at 242 hours.
Terminal Strength JIS-C-6429 Method 1 & 2 Frequency change after test5ppm. No visible damages. Mount on a glass-epoxy board (100x50x1.6mm), then bend to 2mm displacement (velocity 1mm/sec) and keep for 5 seconds. or pulling force 0.5 kg for at least 60 seconds.

Material Composition Declaration

No. Name of Part Material Name Constituent name CAS No. Material Analysis (%)
1 Base Ceramics Al2O3 1344-28-1 63.88%
SiO2 14464-46-1 3.79%
Cr2o3 1308-38-9 1.29%
Mo 7439-33-7 1.00%
Fe 7440-33-7 9.25%
Ni 7439-89-6 8.85%
Co 7440-02-0 4.75%
Ag 7440-48-4 2.98%
Cu 7440-22-4 2.80%
2 Lid Kovar W 7440-50-8 1.04%
Au 7440-02-0 0.24%
Ni 7440-57-5 0.13%
Fe 7439-89-6 54.00%
Co 7440-48-4 17.02%
Ni 7440-02-0 28.32%
Plate Ni () Ni 7440-02-0 0.66%
3 Adhesive Resin Epoxy Silicone resin - 8.62%
Silica - 8.52%
Petroleumsolvents - 7.00%
Ethyl alcohol 64-17-5 0.60%
Bisphenol A-epichlorohydrin polymer 25068-38-6 0.60%
Xylenes (o-, m-, p-isomers) 1330-20-7 0.60%
Ethylbenzene 100-41-4 0.06%
4 Blank Quartz SiO2 (Silicon oxide) 14808-60-7 100.00%
5 Wire Gold Au (Gold) 7440-57-5 100.00%
6 IC Silicon Silicon 7440-21-3 100.00%
7 Electrode Electrode Ag (Silver) 7440-22-4 100.00%
Solder Solder Silver 7440-22-4 74.00%

2508051459_CHANGXING-ELECTRONICS-3ESC120C0033L_C48927823.pdf

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