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quality SMD CMOS Crystal Oscillator Unit CHANGXING ELECTRONICS 9ESC480C0033L Seam Sealed with High Stability factory
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quality SMD CMOS Crystal Oscillator Unit CHANGXING ELECTRONICS 9ESC480C0033L Seam Sealed with High Stability factory
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Specifications
Normal temperature Frequency Tolerance:
±10ppm
Voltage - Supply:
1.8V~3.3V
Operating Temperature:
-40℃~+85℃
Frequency:
48MHz
Mfr. Part #:
9ESC480C0033L
Package:
SMD5032-4P
Key Attributes
Model Number: 9ESC480C0033L
Product Description

Product Overview

The 9ESC480C0033L is a compact SMD seam-sealed crystal oscillator unit from CHANGXING ELECTRONICS CO.,LTD. Designed for automatic mounting and reflow soldering, this CMOS output oscillator offers high precision across a wide frequency range, making it suitable for applications such as wireless communication sets, PDAs, and DSCs. It features a Tri-State function, a wide supply voltage range (1.8V to 5.0V), high stability, low jitter, and low power consumption. This product is RoHS Compliant and Pb Free.

Product Attributes

  • Brand: CHANGXING ELECTRONICS CO.,LTD.
  • Product Series: 9E Series
  • Product Type: SMD Crystal Oscillators CMOS Output
  • Certifications: RoHS Compliant / Pb Free
  • Origin: Fujian, China

Technical Specifications

Specification Value Unit Notes
Nominal Frequency 48.000000 MHz
Tolerance @ 25 Degree 10 ppm
Stability over Operation Temp. 20 ppm -4085
Aging 3 ppm/year
Operating Temperature Range -55125
Storage Temperature Range
Supply Voltage (Vdd) 1.8 ~ 5.0 Vdc
Supply Current (Icc) mA
Standby current (1.8V3.3V) 5010% A max
Output State Control Enable/disable
Rise/Fall Time 5 ns max
Output Voltage VOL V
Output Voltage VOH V
Output Load 15 pF max
Output Waveform CMOS
Output Symmetry 70%Vdd min / 30%Vdd max
Start-up Time 10 ms max
Enable Voltage High V
Disable Voltage Low V
Phase Jitter (12KHz 20MHz) ps max
Fundamental Oscillation mode Level 1
Dimensions 5.0 x 3.2 x 1.2 mm SMD
Product Number 9ESC480C0033L
Model OSC 5.0x3.2 48.000000MHz
Production Weight 55.653 mg

Reflow Condition

Soldering profile: Peak: 250+50, Soldering zone: 230 or more, 3010s. Pre-heating zone 1: 150180, 9030s

Soldering iron method: Bit temperature: 35010, Application time of soldering iron: 31 s. For other procedures, refer to IEC 60068-2-20.

Marking

LOGO, MHz, , ,

Packing

EIA-481-2

Reliability Specifications

Standard test condition (TEMP.: 2015. Relative humidity: 6520%). For any discrepancy in GO/NG, test will be done at TEMP.252. R.H. 655%.

ITEM TEST METHOD SPECIFICATION
Resistance to Soldering Heat GB/T 2423.28-2005,Test Tb Method 1B Frequency change after test5ppm. No visible damages. Terminals shall be covered more than 95% with solder.
Temperature Cycle GB/T2423.22-2002, Method Nb 10 cycles from -25C to 85C. Measurement taken after DUT being left at room temperature for 242 hours. Frequency change after test5ppm.
High Temperature Storage GB/T 2423.2-2001, Method Ba Spending 72 hrs at 125C3C constant temperature. Measurement taken after DUT being left at room temperature for 242 hours. Frequency change after test5ppm.
Shock GB/T 2423.5-1995,Method Ea Peak 1000m/s2, normal width 6ms half sine wave form, 3.7m/s, 3 perpendicular axis of samples, 3 cycles /direction, total 18 cycles. Measurement taken after 1 hour. Frequency change after test5ppm. No visible damages.
Drop GB/T 2423.8- 1995,Method Ed Free drop to the wooden plate from 1.0 m heights for 3 times. Frequency change after test5ppm. No visible damages.
Vibration GB/T 2423.10- 1995, Method Fc Apply 0.75mm vibration at sweep frequency 10500 Hz, for 2h. 10 cycles in each direction of 3 axis. Measurement taken after 1 hour. Frequency change after test5ppm.
Humidity GB/T 2423.3- 2006, Method Cab Spending 96 hrs at 40 C 3 C, with 90 3% R.H. Measurement taken after DUT being left at room temperature for 242 hours. Frequency change after test5ppm.
Low Temperature Storage GB/T 2423.1-2001, Method Aa Spending 72 hrs at -55C3C constant temperature. Measurement taken after DUT being left at room temperature for 242 hours. Frequency change after test5ppm.
Solderability GB/T 2423.28-2005, Method Tc In 255 5 solder bath for 2 0.5 seconds. Terminals shall be covered more than 95% with solder. No visible damage.

Material Composition Declaration

No. Name of Part Material Name Constituent name CAS No. Material Analysis (%)
1 Base Ceramics Al2O3 1344-28-1 63.88%
SiO2 14464-46-1 3.79%
Cr2o3 1308-38-9 1.29%
Mo 7439-98-7 1.00%
Fe 7440-33-7 9.25%
Ni 7439-89-6 8.85%
Co 7440-02-0 4.75%
Ag 7440-48-4 2.98%
Cu 7440-22-4 2.80%
Pin Solder W 7440-50-8 1.04%
Au 7440-02-0 0.24%
Ni 7440-57-5 0.13%
Plate Fe 7439-89-6 54.00%
Co 7440-48-4 17.02%
Ni 7440-02-0 28.32%
Ni () 7440-02-0 0.66%
2 Adhesive Resin Epoxy Conductive Resin - - 100.00%
3 Blank Quartz SiO2 14808-60-7 100.00%
4 Wire Gold Au 7440-57-5 100.00%
5 IC Silicon Silicon 7440-21-3 100.00%
6 Electrode Electrode Ag 7440-22-4 100.00%
7 Lid Kovar Ag 7440-22-4 74.00%
Ethyl alcohol 64-17-5 0.60%
Bisphenol A-epichlorohydrin polymer 25068-38-6 0.60%
Xylenes (o-, m-, p-isomers) 1330-20-7 0.60%
Ethylbenzene 100-41-4 0.06%
Silicone resin - 8.62%
Silica - 8.52%
Petroleumsolvents - 7.00%

2512081627_CHANGXING-ELECTRONICS-9ESC480C0033L_C48927856.pdf

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