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quality CMOS output crystal oscillator CHANGXING ELECTRONICS 4ESC120C0033L ultra small SMD seam sealed for IT applications factory
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quality CMOS output crystal oscillator CHANGXING ELECTRONICS 4ESC120C0033L ultra small SMD seam sealed for IT applications factory
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Specifications
Normal temperature Frequency Tolerance:
±10ppm
Voltage - Supply:
1.8V~3.3V
Operating Temperature:
-40℃~+85℃
Frequency:
12MHz
Mfr. Part #:
4ESC120C0033L
Package:
SMD2520-4P
Key Attributes
Model Number: 4ESC120C0033L
Product Description

Product Overview

The CHANGXING ELECTRONICS CO.,LTD. 4E Series is an ultra-small SMD seam-sealed crystal oscillator designed for IT products such as WLAN, Bluetooth, DSC, and DSL. It features a CMOS output and offers a tri-state function for enhanced application flexibility. This RoHS Compliant and Pb Free oscillator is built for reliable performance in demanding environments.

Product Attributes

  • Brand: CHANGXING ELECTRONICS CO.,LTD.
  • Origin: Fujian, China
  • Series: 4E Series
  • Output Type: CMOS
  • Certifications: RoHS Compliant, Pb Free
  • Packaging: EIA-481-2

Technical Specifications

Specification Value Unit Condition
Model 4ESC120C0033L
Nominal Frequency 12.000000 MHz
Tolerance @ 25 Degree 10 ppm
Stability over Operation Temp. 20 ppm -4085
Aging 3 ppm/year
Operating Temperature Range -55125
Storage Temperature Range -4085
Supply Current (Icc) 5010% mA 1.8V3.3V
Standby current < 1 A
Rise/Fall Time 15 ps max
Output Voltage VOL 10%VDD %VDD
Output Voltage VOH 90%VDD %VDD
Supply Voltage (Vdd) 1.83.3 Vdc
Output Load 10 pF max
Output Symmetry 5010% %
Phase Jitter(12KHz 20MHz) 3 ps max
Start-up Time 5 ms max
Enable Voltage High 70%Vdd min
Disable Voltage Low 30%Vdd max
Dimensions 2.52.00.8 mm SMD
MSL Level 1 IPC/JEDEC J-STD-033C
Fundamental Oscillation mode

Packing Information

Type Standard
Carrier Tape EIA-481-2

Reflow Condition

Stage Temperature Time
Peak 250+50
Soldering Zone 230 3010s
Pre-heating Zone 1 150180 9030s

Reliability Specifications

Test Item Test Method Frequency Change After Test Notes
Resistance to Soldering Heat GB/T 2423.28-2005, Test Tb Method 1B 5ppm Passed through re-flow oven (Preheat to 150 C5C for 60 to 120sec, peak 265 C5C for 10s3sec). Measurement taken after 242 hours at room temperature.
Solderability GB/T 2423.28-2005, Method Tc Terminals shall be covered >95% with solder. No visible damage. Tested in 255 5 solder bath for 2 0.5 seconds.
Terminal Strength JIS-C- 6429 Method 1 & 2 5ppm Mount on glass-epoxy board, bend to 2mm displacement (velocity 1mm/sec) and hold for 5 seconds, or pulling force 0.5 kg for at least 60 seconds. No visible damages.
Drop GB/T 2423.8- 1995, Method Ed 5ppm Free drop from 1.0 m height for 3 times. Measurement taken after 1 hour.
Vibration GB/T 2423.10- 1995, Method Fc 5ppm Apply 0.75mm vibration at sweep frequency 10500 Hz, for 2h. 10 cycles in each direction of 3 axes. Measurement taken after 1 hour.
Shock GB/T 2423.5- 1995, Method Ea 5ppm Peak 1000m/s, normal width 6ms half sine wave form, 3.7m/s, 3 perpendicular axes, 3 cycles/direction, total 18 cycles. Measurement taken after 1 hour.
Humidity GB/T 2423.3- 2006, Method Cab 5ppm 96 hrs at 40 C 3 C, with 90 3% R.H. Measurement taken after 242 hours at room temperature.
High Temperature Storage GB/T 2423.2-2001, Method Ba 5ppm 72 hrs at 125C3C. Measurement taken after 242 hours at room temperature.
Low Temperature Storage GB/T 2423.1-2001, Method Aa 5ppm 72 hrs at -55C3C. Measurement taken after 242 hours at room temperature.
Temperature Cycle GB/T2423.22-2002, Method Nb 5ppm 10 cycles from -25C to 85C. Measurement taken after 242 hours at room temperature.

Material Composition Declaration

No. Part Name Material Name Constituent Name CAS No. Material Analysis (%)
1 Base Ceramics Al2O3 1344-28-1 63.88%
SiO2 14464-46-1 3.79%
Cr2o3 1308-38-9 1.29%
Mo 7439-98-7 1.00%
Fe 7440-33-7 9.25%
Ni 7439-89-6 8.85%
Co 7440-02-0 4.75%
Ag 7440-48-4 2.98%
Cu 7440-22-4 2.80%
2 Lid Kovar W 7440-50-8 1.04%
Au 7440-02-0 0.24%
Ni 7440-57-5 0.13%
Fe 7439-89-6 54.00%
Co 7440-48-4 17.02%
Ni 7440-02-0 28.32%
Plate Ni () 7440-02-0 0.66%
3 Adhesive Resin Epoxy - - 100.00%
4 Blank Quartz Silicon oxide 14808-60-7 100.00%
5 Wire Gold Au 7440-57-5 100.00%
6 IC Silicon Silicon 7440-21-3 100.00%
7 Electrode Electrode Ag 7440-22-4 100.00%
Solder Solder Silver 7440-22-4 74.00%
Ethyl alcohol 64-17-5 0.60%
Bisphenol A-epichlorohydrin polymer 25068-38-6 0.60%
Xylenes (o-, m-, p-isomers) 1330-20-7 0.60%
Ethylbenzene 100-41-4 0.06%
Silicone resin - 8.62%
Silica - 8.52%
Petroleum solvents - 7.00%

2512081627_CHANGXING-ELECTRONICS-4ESC120C0033L_C48927837.pdf

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