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quality Ultra Small Seam Sealed SMD Crystal Oscillator 25 MHz CMOS Output CHANGXING ELECTRONICS 3ESC250C0033L for IT Applications factory
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quality Ultra Small Seam Sealed SMD Crystal Oscillator 25 MHz CMOS Output CHANGXING ELECTRONICS 3ESC250C0033L for IT Applications factory
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Specifications
Normal temperature Frequency Tolerance:
±10ppm
Voltage - Supply:
1.8V~3.3V
Operating Temperature:
-40℃~+85℃
Frequency:
25MHz
Mfr. Part #:
3ESC250C0033L
Package:
SMD2016-4P
Key Attributes
Model Number: 3ESC250C0033L
Product Description

Product Overview

This specification sheet details the 2.0x1.6mm SMD Crystal Oscillator, 25.000000MHz, 3ESC250C0033L, from CHANGXING ELECTRONICS CO.,LTD. Designed for ultra-small seam-sealed applications, this CMOS output oscillator is suitable for IT products including WLAN, Bluetooth, DSC, and DSL. Key features include a tri-state function and RoHS/Pb-Free compliance.

Product Attributes

  • Brand: CHANGXING ELECTRONICS CO.,LTD.
  • Product Series: 3E Series
  • Output Type: CMOS Output
  • Compliance: RoHS Compliant / Pb Free
  • Sealing: seam sealed
  • Package Type: SMD
  • Origin: Fujian, China

Technical Specifications

Specification Value Unit Notes
Nominal Frequency 25.000000 MHz
Tolerance @ 25 Degree 10 ppm
Stability over Operation Temp. 20 ppm
Aging 3 ppm/year
Input Voltage (VDD) 1.83.3 Vdc
Input Current (IDD) 5 mA max
Standby current 5010% A max
Output State Control Enable/disable
Rise/Fall Time 10%VDD to 90%VDD ns max
Output Voltage VOL 1.8 V max
Output Voltage VOH 90%VDD V min
Output Load 15 pF max
Output Waveform COMS
Output Symmetry 10%
Start-up Time 5 ms max
Jitter (rms) 25.000000 ps max
Operating Temperature Range -4085
Storage Temperature Range -55125
Dimensions 2.0 x 1.6 x 0.75 mm
MSL Level 1 IPC/JEDEC J-STD-033C
Product Model 3ESC250C0033L
Product Weight 8.144 mg

Packing Information

Type Standard
Packaging EIA-481-2

Reliability Specifications

Item Test Method Specification Notes
High Temperature Storage GB/T 2423.2-2001, Method Ba Frequency change after test 5ppm 72 hrs at 125C3C, measurement after 242 hrs at room temp.
Low Temperature Storage GB/T 2423.1-2001, Method Aa Frequency change after test 5ppm 72 hrs at -55C3C, measurement after 242 hrs at room temp.
Humidity GB/T 2423.3-2006, Method Cab Frequency change after test 5ppm 96 hrs at 40C 3C, 903% R.H., measurement after 242 hrs at room temp.
Temperature Cycle GB/T2423.22-2002, Method Nb Frequency change after test 5ppm 10 cycles from -25C to 85C, measurement after 242 hrs at room temp.
Shock GB/T 2423.5-1995, Method Ea Frequency change after test 5ppm Peak 1000m/s, 6ms half sine wave, 3 perpendicular axes, 3 cycles/direction, total 18 cycles. Measurement after 1 hour.
Drop GB/T 2423.8-1995, Method Ed Frequency change after test 5ppm Free drop from 1.0 m to wooden plate, 3 times. No visible damages.
Vibration GB/T 2423.10-1995, Method Fc Frequency change after test 5ppm 0.75mm vibration at sweep frequency 10500 Hz, for 2h, 10 cycles in each direction of 3 axes. Measurement after 1 hour.
Resistance to Soldering Heat GB/T 2423.28-2005, Test Tb Method 1B Frequency change after test 5ppm. Terminals shall be covered more than 95% with solder. No visible damage. In 255 5 solder bath for 2 0.5 seconds.
Solderability GB/T 2423.28-2005, Method Tc No visible damages. Passed through re-flow oven: Preheat to 150C5C for 60-120s, peak 265C5C for 10s3sec. Measurement after 242 hours at room temp.
Terminal Strength JIS-C-6429 Method 1 & 2 Frequency change after test 5ppm. No visible damages. Mount on glass-epoxy board, bend to 2mm displacement (1mm/sec) and hold 5s, or pulling force 0.5 kg for 60s.

Material Composition Declaration

No. Name of Part Material Name Constituent name CAS No. Material Analysis(%)
1 Base Ceramics Al2O3 1344-28-1 63.88%
SiO2 14464-46-1 3.79%
Cr2o3 1308-38-9 1.29%
Mo 7439-98-7 1.00%
Fe 7440-33-7 9.25%
Ni 7439-89-6 8.85%
Co 7440-02-0 4.75%
Ag 7440-48-4 2.98%
Cu 7440-22-4 2.80%
2 Lid Kovar W 7440-50-8 1.04%
Au 7440-02-0 0.24%
Ni 7440-57-5 0.13%
3 Adhesive Resin Epoxy Conductive Resin Fe 3ESC160C0033L 54.00%
Co 7440-48-4 17.02%
Ni 7440-02-0 28.32%
Ni 7440-02-0 0.66%
Ethyl alcohol 64-17-5 0.60%
Bisphenol A-epichlorohydrin polymer 25068-38-6 0.60%
Xylenes (o-, m-, p-isomers) 1330-20-7 0.60%
Ethylbenzene 100-41-4 0.06%
Silicone resin - 8.62%
Silica - 8.52%
Petroleumsolvents - 7.00%
4 Blank Quartz SiO2 Silicon oxide 14808-60-7 100.00%
5 Wire Gold Au Gold 7440-57-5 100.00%
6 IC Silicon Silicon 7440-21-3 100.00%
7 Electrode Electrode Ag Silver 7440-22-4 100.00%
Silver 7440-22-4 74.00%

2508051459_CHANGXING-ELECTRONICS-3ESC250C0033L_C48927827.pdf

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