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quality SMD crystal oscillators CHANGXING ELECTRONICS 4ESC500C0033L with tri state function and 50 MHz nominal frequency factory
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quality SMD crystal oscillators CHANGXING ELECTRONICS 4ESC500C0033L with tri state function and 50 MHz nominal frequency factory
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Specifications
Normal temperature Frequency Tolerance:
±10ppm
Voltage - Supply:
1.8V~3.3V
Operating Temperature:
-40℃~+85℃
Frequency:
50MHz
Mfr. Part #:
4ESC500C0033L
Package:
SMD2520-4P
Key Attributes
Model Number: 4ESC500C0033L
Product Description

Product Overview

The CHANGXING ELECTRONICS CO.,LTD. 2.5x2.0mm SMD Crystal Oscillators (Model: 4ESC500C0033L) are ultra-small, seam-sealed clock crystal oscillator units designed for IT product applications including WLAN, Bluetooth, DSC, and DSL. These CMOS output oscillators offer a nominal frequency of 50.000000MHz and feature a tri-state function, with RoHS compliance and Pb-free construction.

Product Attributes

  • Brand: CHANGXING ELECTRONICS CO.,LTD.
  • Product Line: 4E Series
  • Type: SMD Crystal Oscillators
  • Output Type: CMOS Output
  • Construction: Seam sealed
  • Compliance: RoHS Compliant / Pb Free
  • Origin: Fujian Province, China

Technical Specifications

Specification Value Unit Notes
Nominal Frequency 50.000000 MHz
Tolerance @ 25 Degree 10 ppm
Stability over Operation Temp. 20 ppm/year -4085
Aging 3 ppm/year
Operating Temperature Range -55125
Storage Temperature Range -4085
Supply Voltage (Vdd) 1.83.3 Vdc
Supply Current (Icc) 5 mA max
Standby current 10 A max
Output Load 10 pF max
Output Symmetry 5010%
Output Voltage VOL 10%VDD min
Output Voltage VOH 90%VDD min
Enable Voltage High 70%Vdd min
Disable Voltage Low 30%Vdd max
Start-up Time 5 ms max
Rise/Fall Time 15 ps max
Phase Jitter(12KHz 20MHz) 3
Dimensions 2.5x2.0x0.8 mm
MSL Level 1 IPC/JEDEC J-STD-033C Phase
Fundamental Oscillation mode
Output State Control Enable/disable
Output Waveform CMOS
Product No. 4ESC500C0033L
Model 2.52.0 OSC 50.000000MHz
Product Weight 13.843 mg

Reflow Condition

Temperature profile for reflow soldering: Peak: 250+50, Soldering zone: 230 or more, 3010s. Pre-heating zone 1: 150180, 9030s.

Soldering iron method: Bit temperature: 35010, Application time of soldering iron: 31 s. For other procedures, refer to IEC 60068-2-20.

Packing

EIA-481-2

Reliability Specifications

Standard test condition (TEMP.: 2015. Relative humidity: 6520%). For any discrepancy in GO/NG, test will be done at TEMP. 252. R.H. 655%.

No. SPECIFICATION ITEM TEST METHOD Frequency change after test Notes
1 Resistance to Soldering Heat GB/T 2423.28-2005, Test Tb Method 1B 5ppm Passed through the re-flow oven under the following condition. Preheat to 150 C5C for 60 to 120sec, and peak 265 C5C for 10s3sec. Measurement taken after DUT being left at room temperature for at 242 hours.
2 Solderability GB/T 2423.28-2005, Method Tc 5ppm In 255 5 solder bath for 2 0.5 seconds. There is noneed to do functioned test. 8-12X magnifier.
3 Terminal Strength JIS-C- 6429 Method 1 & 2 5ppm Mount on a glass-epoxy board (100x50x1.6mm), then bend to 2mm displacement (velocity 1mm/sec) and keep for 5 seconds. or pulling force 0.5 kg for at least 60seconds. No visible damages. Terminals shall be covered more then 95% with solder. No visible damage
4 Drop GB/T 2423.8- 1995, Method Ed 5ppm Free drop to the wooden plate from 1.0 m heights for 3 times. No visible damages.
5 Vibration GB/T 2423.10- 1995, Method Fc 5ppm Peak 1000m/s2, normal width 6ms half sine wave form, 3.7m/s, 3 perpendicular axis of samples, 3 cycles /direction, total 18 cycles. Measurement taken after 1hour.
6 Shock GB/T 2423.5- 1995, Method Ea 5ppm Apply 0.75mm vibration at sweep frequency 10500 Hz, for 2h. 10 cycles in each direction of 3 axis. Measurement taken after 1 hour.
7 Humidity GB/T 2423.3- 2006, Method Cab 5ppm Spending 96 hrs at 40 C 3 C, with 90 3% R.H. Measurement taken after DUT being left at room temperature for 242 hours.
8 High Temperature Storage GB/T 2423.2-2001, Method Ba 5ppm Spending 72 hrs at 125C3C constant temperature. Measurement taken after DUT being left at room temperature for 242 hours.
9 Low Temperature Storage GB/T 2423.1-2001, Method Aa 5ppm Spending 72 hrs at -55C3C constant temperature. Measurement taken after DUT being left at room temperature for 242 hours.
10 Temperature Cycle GB/T2423.22-2002, Method Nb 5ppm 10 cycles from -25C to 85C. Measurement taken after DUT being left at room temperature for 242 hours.

Material Composition Declaration

No. PRODUCTION NAME Name of Part Material Name Constituent name CAS No. Material Analysis(%)
1 OSC 2520 Base Ceramics Al2O3 1344-28-1 63.88%
SiO2 14464-46-1 3.79%
Cr2o3 1308-38-9 1.29%
Mo 7439-98-7 1.00%
Fe 7440-33-7 9.25%
Ni 7439-89-6 8.85%
Co 7440-02-0 4.75%
Ag 7440-48-4 2.98%
Cu 7440-22-4 2.80%
Metallization Pin Metallization W 7440-50-8 1.04%
Au 7440-02-0 0.24%
Ni 7440-57-5 0.13%
Solder Solder Fe 7439-89-6 54.00%
Co 7440-48-4 17.02%
Ni 7440-02-0 28.32%
Plate Plate Ni 7440-02-0 0.66%
2 Lid Kovar
3 Adhesive Resin Epoxy 100.00%
4 Blank Quartz SiO2 14808-60-7 100.00%
5 Wire Gold Au 7440-57-5 100.00%
6 IC Silicon Silicon 7440-21-3 100.00%
7 Electrode Electrode Ag 7440-22-4 100.00%
Silver 7440-22-4 74.00%
Conductive Resin Ethyl alcohol 64-17-5 0.60%
Bisphenol A-epichlorohydrin polymer 25068-38-6 0.60%
Xylenes (o-, m-, p-isomers) 1330-20-7 0.60%
Ethylbenzene 100-41-4 0.06%
Silicone resin - 8.62%
Silica - 8.52%
Petroleumsolvents - 7.00%

2512081627_CHANGXING-ELECTRONICS-4ESC500C0033L_C48927846.pdf

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