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Specifications
Normal temperature Frequency Tolerance:
±10ppm
Voltage - Supply:
1.8V~3.3V
Operating Temperature:
-40℃~+85℃
Frequency:
12MHz
Mfr. Part #:
7ESC120C0033L
Package:
SMD7050-4P
Key Attributes
Model Number:
7ESC120C0033L
Product Description
Product Overview
The 7ESC120C0033L is a compact SMD crystal oscillator from CHANGXING ELECTRONICS CO.,LTD., designed for automatic mounting and reflow soldering. It offers high precision across a wide frequency range, with features like Tri-State function, a supply voltage range of 1.8 V to 5.0 V, and low power consumption. This RoHS Compliant / Pb Free oscillator is suitable for applications in wireless communication, PCs, and LCDM.
Product Attributes
- Brand: CHANGXING ELECTRONICS CO.,LTD.
- Product Line: 7E Series
- Product Type: SMD Crystal Oscillators
- Output Type: CMOS Output
- Certifications: RoHS Compliant / Pb Free
- Compliance: MSL Level 1 IPC/JEDEC J-STD-033C
- Origin: Fujian, China
Technical Specifications
| Specification | Value | Unit |
|---|---|---|
| Nominal Frequency | 12.000000 | MHz |
| Tolerance @ 25 Degree | 10 | ppm |
| Stability over Operation Temp. | 20 | ppm |
| Operating Temperature Range | -40 to 85 | |
| Storage Temperature Range | -55 to 125 | |
| Supply Voltage (Vdd) | 1.8 to 5.0 | Vdc |
| Supply Current (Icc) @ 1.8V~3.3V | 5 | A max |
| Standby current | 10 | A max |
| Phase Jitter (12KHz 20MHz) | 5 | ps max |
| Rise/Fall Time | 5 | ns max |
| Output Voltage VOL | 30%Vdd max | |
| Output Voltage VOH | 70%Vdd min | |
| Output Load | 15 | pF |
| Start-up Time | 5 | ms max |
| Fundamental Oscillation mode | ||
| Output State Control | Enable/disable | |
| Output Symmetry | 5010% | |
| Aging | 3 | ppm/year |
| Model Number | 7ESC120C0033L | |
| Product No. | 7.05.0 OSC 12.000000MHz | |
| Dimensions | 7.0x5.0x1.3mm | SMD |
Reflow Condition
| Parameter | Value |
|---|---|
| Peak Temperature | 250+50 |
| Soldering Zone ( 230) | 3010s |
| Pre-heating Zone 1 (150180) | 9030s |
Packing
EIA-481-2 standard packing.
Reliability Specifications
| Item | Test Method | Specification | Notes |
|---|---|---|---|
| Temperature Cycle | GB/T2423.22-2002, Method Nb | Frequency change after test5ppm | 10 cycles from -25C to 85C. Measurement taken after DUT being left at room temperature for 242 hours. |
| Low Temperature Storage | GB/T2423.1-2001, Method Aa | Frequency change after test5ppm | Spending 72 hrs at -55C3C constant temperature. Measurement taken after DUT being left at room temperature for 242 hours. |
| Humidity | GB/T2423.3-2006, Method Cab | Frequency change after test5ppm | Spending 96 hrs at 40 C 3 C, with 90 3% R.H. Measurement taken after DUT being left at room temperature for 242 hours. |
| High Temperature Storage | GB/T2423.2-2001, Method Ba | Frequency change after test5ppm | Spending 72 hrs at 125C3C constant temperature. Measurement taken after DUT being left at room temperature for 242 hours. |
| Drop | GB/T 2423.8- 1995, Method Ed | Frequency change after test5ppm. No visible damages. | Free drop to the wooden plate from 1.0 m heights for 3 times. Measurement taken after 1 hour. |
| Vibration | GB/T 2423.10- 1995, Method Fc | Frequency change after test5ppm. | Apply 0.75mm vibration at sweep frequency 10500 Hz, for 2h. 10 cycles in each direction of 3 axis. Measurement taken after 1 hour. |
| Resistance to Soldering Heat | GB/T 2423.28-2005, Test Tb Method 1B | Frequency change after test5ppm. No visible damages. | Passed through the re-flow oven under the following condition. Preheat to 150 C5C for 60 to 120sec, and peak 265 C5C for 10s3sec. Measurement taken after DUT being left at room temperature for at 242 hours. |
| Shock | GB/T 2423.5- 1995, Method Ea | Frequency change after test5ppm. | Peak 1000m/s2, normal width 6ms half sine wave form, 3.7m/s, 3 perpendicular axis of samples, 3 cycles /direction, total 18 cycles. Measurement taken after 1 hour. |
| Solderability | GB/T 2423.28-2005, Method Tc | Terminals shall be covered more then 95% with solder. No visible damage. | In 255 5 solder bath for 2 0.5 seconds. 8-12X magnifier. |
| Terminal Strength | JIS-C- 6429 Method 1 & 2 | Frequency change after test5ppm. No visible damages. | Mount on a glass-epoxy board (100x50x1.6mm), then bend to 2mm displacement (velocity 1mm/sec) and keep for 5 seconds. or pulling force 0.5 kg for at least 60 seconds. Measurement taken after 1 hour. |
Material Composition Declaration
| No. | Name of Part | Material Name | Constituent name | CAS No. | Material Analysis(%) |
|---|---|---|---|---|---|
| 1 | Base | Ceramics | Al2O3 | 1344-28-1 | 63.88% |
| SiO2 | 14464-46-1 | 3.79% | |||
| Cr2o3 | 1308-38-9 | 1.29% | |||
| Mo | 7439-98-7 | 1.00% | |||
| Fe | 7439-89-6 | 8.85% | |||
| Ni | 7440-02-0 | 4.75% | |||
| Co | 7440-48-4 | 2.98% | |||
| Ag | 7440-22-4 | 2.80% | |||
| Cu | 7440-50-8 | 1.04% | |||
| Pin | Solder | W | 7440-33-7 | 9.25% | |
| Au | 7440-57-5 | 0.13% | |||
| Ni | 7440-02-0 | 0.24% | |||
| Fe | 7439-89-6 | 54.00% | |||
| Co | 7440-48-4 | 17.02% | |||
| Ni | 7440-02-0 | 28.32% | |||
| Plate | Ni | Ni | 7440-02-0 | 0.66% | |
| 2 | Lid | Kovar | |||
| 3 | Adhesive Resin | Epoxy Conductive Resin | 100.00% | ||
| 4 | Quartz | SiO2 | SiO2 | 14808-60-7 | 100.00% |
| 5 | Wire | Gold | Au | 7440-57-5 | 100.00% |
| 6 | IC | Silicon | Silicon | 7440-21-3 | 100.00% |
| 7 | Electrode | Electrode | Ag | 7440-22-4 | 100.00% |
| Silver | 7440-22-4 | 74.00% | |||
| Ethyl alcohol | 64-17-5 | 0.60% | |||
| Bisphenol A-epichlorohydrin polymer | 25068-38-6 | 0.60% | |||
| Xylenes (o-, m-, p-isomers) | 1330-20-7 | 0.60% | |||
| Ethylbenzene | 100-41-4 | 0.06% | |||
| Silicone resin | - | 8.62% | |||
| Silica | - | 8.52% | |||
| Petroleumsolvents | - | 7.00% |
2512081627_CHANGXING-ELECTRONICS-7ESC120C0033L_C48927858.pdf
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