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quality Compact 2.5x2.0mm SMD Crystal Oscillator CHANGXING ELECTRONICS 4ESC400C0033L CMOS Output Seam Sealed factory
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quality Compact 2.5x2.0mm SMD Crystal Oscillator CHANGXING ELECTRONICS 4ESC400C0033L CMOS Output Seam Sealed factory
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Specifications
Normal temperature Frequency Tolerance:
±10ppm
Voltage - Supply:
1.8V~3.3V
Operating Temperature:
-40℃~+85℃
Frequency:
40MHz
Mfr. Part #:
4ESC400C0033L
Package:
SMD2520-4P
Key Attributes
Model Number: 4ESC400C0033L
Product Description

Product Overview

The CHANGXING ELECTRONICS CO.,LTD. 2.5x2.0mm SMD Crystal Oscillators, part of the CMOS Output / 4E Series, are ultra-small, seam-sealed clock crystal oscillator units designed for IT product applications including WLAN, Bluetooth, DSC, and DSL. These oscillators offer a tri-state function and are RoHS Compliant / Pb Free.

Product Attributes

  • Brand: CHANGXING ELECTRONICS CO.,LTD.
  • Origin: Fujian, China
  • Certifications: RoHS Compliant / Pb Free
  • Series: 4E Series
  • Output Type: CMOS
  • Package Type: SMD
  • Sealing: Seam sealed

Technical Specifications

Specification Value Unit Notes
Nominal Frequency 40.000000 MHz
Tolerance @ 25 Degree ±10 ppm
Stability over Operation Temp. (-40~85°C) ±20 ppm
Aging (per year) ±3 ppm/year
Operating Temperature Range -55 ~ 125 °C
Storage Temperature Range -40 ~ 85 °C
Supply Voltage (Vdd) 1.8 ~ 3.3 Vdc
Supply Current (Icc) 50 mA max
Standby current <10 μA max
Output Load 10 pF max
Rise/Fall Time <15 ns max
Output Voltage VOL 10% VDD
Output Voltage VOH 90% VDD
Output Symmetry 50 ±10%
Phase Jitter (12KHz ~ 20MHz) <15 ps max
Start-up Time 5 ms max
Enable Voltage High 70% Vdd min
Disable Voltage Low 30% Vdd max
Output Waveform CMOS
Fundamental Oscillation mode
MSL Level 1 IPC/JEDEC J-STD-033C
Dimensions (L x W x H) 2.5 x 2.0 x 0.8 mm
Product Number 4ESC400C0033L
Model OSC 2.5x2.0
Product Weight 13.843 mg

Reflow Condition

Temperature profile for reflow soldering:
Peak: 250+50°C
Soldering zone: ≥ 230°C, 30±10s.
Pre-heating zone 1: 150180°C, 90±30s.

Soldering iron method:
Bit temperature: 350±10°C
Application time of soldering iron: 3+1 s

Reliability Specifications

Standard test condition (TEMP.: 20±15°C. Relative humidity: 65±20%). For any discrepancy in GO/NG, test will be done at TEMP. 25±2°C. R.H. 65±5%.

No. SPECIFICATION ITEM TEST METHOD Frequency change after test Notes
1 Resistance to SolderingHeat GB/T 2423.28-2005, Test Tb Method 1B ≤±5ppm Passed through the re-flow oven under the following condition. Preheat to 150 °C±5°C for 60 to 120sec, and peak 265 °C±5°C for 10s±3sec. Measurement taken after DUT being left at room temperature for at 24±2 hours.
2 Solderability GB/T 2423.28-2005, Method Tc In 255 ± 5°C solder bath for 2 ± 0.5 seconds. Terminals shall be covered more then 95% with solder. No visible damage.
3 Terminal Strength JIS-C- 6429 Method 1 & 2 Mount on a glass-epoxy board (100x50x1.6mm), then bend to 2mm displacement (velocity 1mm/sec) and keep for 5 seconds. or pulling force 0.5 kg for at least 60 seconds. No visible damages.
4 Drop GB/T 2423.8- 1995, Method Ed ≤±5ppm Free drop to the wooden plate from 1.0 m heights for 3 times. Measurement taken after 1 hour.
5 Vibration GB/T 2423.10- 1995, Method Fc ≤±5ppm Apply 0.75mm vibration at sweep frequency 10500 Hz, for 2h. 10 cycles in each direction of 3 axis. Measurement taken after 1 hour.
6 Shock GB/T 2423.5- 1995, Method Ea ≤±5ppm Peak 1000m/s2, normal width 6ms half sine wave form, 3.7m/s, 3 perpendicular axis of samples, 3 cycles /direction, total 18 cycles. Measurement taken after 1 hour.
7 Humidity GB/T 2423.3- 2006, Method Cab ≤±5ppm Spending 96 hrs at 40 °C ± 3 °C, with 90± 3% R.H. Measurement taken after DUT being left at room temperature for 24±2 hours.
8 Temperature Cycle GB/T2423.22-2002, Method Nb ≤±5ppm 10 cycles from -25°C to 85°C. Measurement taken after DUT being left at room temperature for 24±2 hours.
9 High Temperature Storage GB/T 2423.2-2001, Method Ba ≤±5ppm Spending 72 hrs at 125°C±3°C constant temperature. Measurement taken after DUT being left at room temperature for 24±2 hours.
10 Low Temperature Storage GB/T 2423.1-2001, Method Aa ≤±5ppm Spending 72 hrs at -55°C±3°C constant temperature. Measurement taken after DUT being left at room temperature for 24±2 hours.

Material Composition Declaration

No. PRODUCTION NAME Name of Part Material Name CAS No. Material Analysis (%)
1 OSC 2520 Base () Aluminum oxide 1344-28-1 63.88%
Silica 14464-46-1 3.79%
Chromium oxide 1308-38-9 1.29%
Molybdenum 7439-98-7 1.00%
Iron 7440-33-7 9.25%
Nickel 7439-89-6 8.85%
Cobalt 7440-02-0 4.75%
Silver 7440-48-4 2.98%
Copper 7440-22-4 2.80%
2 Metallization () Tungsten 7440-50-8 1.04%
Gold 7440-02-0 0.24%
Nickel 7440-57-5 0.13%
Iron 7439-89-6 54.00%
Cobalt 7440-48-4 17.02%
Nickel 7440-02-0 28.32%
Plate () Nickel () 7440-02-0 0.66%
3 Adhesive Resin Epoxy 25068-38-6 0.60%
Ethyl alcohol 64-17-5 0.60%
Bisphenol A-epichlorohydrin polymer 25068-38-6 0.60%
Xylenes (o-, m-, p-isomers) 1330-20-7 0.60%
Ethylbenzene 100-41-4 0.06%
Silicone resin - 8.62%
Silica - 8.52%
Petroleumsolvents - 7.00%
4 Blank () Quartz 14808-60-7 100.00%
5 Wire Gold 7440-57-5 100.00%
6 IC Silicon 7440-21-3 100.00%
7 Electrode () Silver 7440-22-4 100.00%
8 Solder () Silver 7440-22-4 74.00%

2512081627_CHANGXING-ELECTRONICS-4ESC400C0033L_C48927844.pdf

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