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quality RoHS Compliant Pb Free Quartz Crystal Oscillator CHANGXING ELECTRONICS 8ESC160C0033L with ultra small seam sealed design factory
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quality RoHS Compliant Pb Free Quartz Crystal Oscillator CHANGXING ELECTRONICS 8ESC160C0033L with ultra small seam sealed design factory
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Specifications
Normal temperature Frequency Tolerance:
±10ppm
Voltage - Supply:
1.8V~3.3V
Operating Temperature:
-40℃~+85℃
Frequency:
16MHz
Mfr. Part #:
8ESC160C0033L
Package:
SMD3225-4P
Key Attributes
Model Number: 8ESC160C0033L
Product Description

Product Overview

The CHANGXING ELECTRONICS CO.,LTD. 8ESC160C0033L is a 3.2x2.5mm SMD Crystal Oscillator with CMOS Output, designed for IT products such as WLAN, Bluetooth, DSC, and DSL. It features an ultra-small seam-sealed design and offers a tri-state function. This RoHS Compliant and Pb Free product is suitable for a wide range of operating temperatures and provides stable performance.

Product Attributes

  • Brand: CHANGXING ELECTRONICS CO.,LTD.
  • Product Line: 8E Series
  • Product Type: Quartz Crystal Oscillator
  • Output Type: CMOS Output
  • Package: SMD Crystal Oscillators
  • Compliance: RoHS Compliant / Pb Free
  • Origin: Fujian, China

Technical Specifications

Specification Value Unit
Model 8ESC160C0033L
Nominal Frequency 16.000000 MHz
Tolerance @ 25 Degree 10 ppm
Stability over Operation Temp. 20 ppm
Aging 3 ppm/year
Operating Temperature Range -4085
Storage Temperature Range -55125
Supply Voltage (Vdd) 1.83.3 Vdc
Supply Current (Icc) 5 mA max
Standby current 1.8 A max
Output State Control Enable/disable
Enable Voltage High 70%Vdd min
Disable Voltage Low 30%Vdd max
Rise/Fall Time 5 ns max
Output Voltage VOL 10%VDD
Output Voltage VOH 90%VDD
Output Load 15 pF max
Output Waveform CMOS
Output Symmetry 5010%
Start-up Time 16 ms max
Fundamental Oscillation mode Level 1
MSL Phase Jitter(12KHz20MHz) 8 5010% ps max
Dimensions 3.2x2.5x1.0mm
Product No. 8ESC160C0033L
Product Weight 29.568 mg

Reflow Condition

Soldering profile: Preheat zone 1: 150180, 9030s. Soldering zone: 230 or more, 3010s. Peak: 250+50.

Soldering iron method: Bit temperature: 35010. Application time of soldering iron: 3+1 s.

Packing

EIA-481-2 standard packing.

Reliability Specifications

Standard test condition (TEMP.: 2015. Relative humidity: 6520%). For any discrepancy in GO/NG, test will be done at TEMP. 252. R.H. 655%.

Item Test Method Specification
Drop GB/T 2423.8-1995, Method Ed Free drop to the wooden plate from 1.0 m heights for 3 times. Frequency change after test5ppm. No visible damages.
Vibration GB/T 2423.10-1995, Method Fc Apply 0.75mm vibration at sweep frequency 10500 Hz, for 2h. 10 cycles in each direction of 3 axis. Measurement taken after 1 hour. Frequency change after test5ppm.
Resistance to Soldering Heat GB/T 2423.28-2005, Test Tb Method 1B In 255 5 solder bath for 2 0.5 seconds. Measurement taken after DUT being left at room temperature for 242 hours. Frequency change after test5ppm. Terminals shall be covered more then 95% with solder. No visible damage.
Temperature Cycle GB/T2423.22-2002, Method Nb 10 cycles from -25C to 85C. Measurement taken after DUT being left at room temperature for 242 hours. Frequency change after test5ppm. No visible damages.
Low Temperature Storage GB/T 2423.1-2001, Method Aa Spending 72 hrs at -55C3C constant temperature. Measurement taken after DUT being left at room temperature for 242 hours. Frequency change after test5ppm. No visible damages.
Humidity GB/T 2423.3-2006, Method Cab Spending 96 hrs at 40 C 3 C, with 90 3% R.H. Measurement taken after DUT being left at room temperature for 242 hours. Frequency change after test5ppm. No visible damages.
Shock GB/T 2423.5-1995, Method Ea Peak 1000m/s2, normal width 6ms half sine wave form, 3.7m/s, 3 perpendicular axis of samples, 3 cycles /direction, total 18 cycles. Measurement taken after 1 hour. Frequency change after test5ppm. No visible damages.
High Temperature Storage GB/T 2423.2-2001, Method Ba Spending 72 hrs at 125C3C constant temperature. Measurement taken after DUT being left at room temperature for 242 hours. Frequency change after test5ppm. No visible damages.
Solderability GB/T 2423.28-2005, Method Tc Mount on a glass-epoxy board (100x50x1.6mm), then bend to 2mm displacement (velocity 1mm/sec) and keep for 5 seconds. or pulling force 0.5 kg for at least 60 seconds. Frequency change after test5ppm. No visible damages. Terminals shall be covered more then 95% with solder.
Terminal Strength JIS-C- 6429 Method 1 & 2 Passed through the re-flow oven under the following condition. Preheat to 150 C5C for 60 to 120sec, and peak 265 C5C for 10s3sec. Measurement taken after DUT being left at room temperature for at 242 hours. Frequency change after test5ppm. No visible damages.

Material Composition Declaration

No. Name of Part Material Name Constituent name CAS No. Material Analysis(%)
1 Base Ceramics Al2O3 1344-28-1 63.88%
SiO2 14464-46-1 3.79%
Cr2o3 1308-38-9 1.29%
Mo 7439-33-7 1.00%
Fe 7440-33-7 9.25%
Ni 7439-89-6 8.85%
Co 7440-02-0 4.75%
Ag 7440-48-4 2.98%
Cu 7440-22-4 2.80%
2 Lid Kovar Metallization W 7440-50-8 1.04%
Au 7440-02-0 0.24%
Ni 7440-57-5 0.13%
Fe 7439-89-6 54.00%
Co 7440-48-4 17.02%
Ni 7440-02-0 28.32%
Epoxy Ni 7440-02-0 0.66%
3 Adhesive Resin Conductive Resin - - 100.00%
4 Blank Quartz SiO2 Silicon oxide 14808-60-7 100.00%
5 Wire Gold Au Gold 7440-57-5 100.00%
6 IC Silicon Silicon 7440-21-3 100.00%
7 Electrode Electrode Ag Silver 7440-22-4 100.00%
Silver Silver 7440-22-4 74.00%
Ethyl alcohol Ethyl alcohol 64-17-5 0.60%
Bisphenol A-epichlorohydrin polymer Bisphenol A-epichlorohydrin polymer 25068-38-6 0.60%
Xylenes (o-, m-, p-isomers) Xylenes (o-, m-, p-isomers) 1330-20-7 0.60%
Ethylbenzene Ethylbenzene 100-41-4 0.06%
Silicone resin Silicone resin - 8.62%
Silica Silica - 8.52%
Petroleum solvents Petroleum solvents - 7.00%

2512081627_CHANGXING-ELECTRONICS-8ESC160C0033L_C48927809.pdf

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