Product Overview
The CHANGXING ELECTRONICS CO.,LTD. 8ESC160C0033L is a 3.2x2.5mm SMD Crystal Oscillator with CMOS Output, designed for IT products such as WLAN, Bluetooth, DSC, and DSL. It features an ultra-small seam-sealed design and offers a tri-state function. This RoHS Compliant and Pb Free product is suitable for a wide range of operating temperatures and provides stable performance.
Product Attributes
- Brand: CHANGXING ELECTRONICS CO.,LTD.
- Product Line: 8E Series
- Product Type: Quartz Crystal Oscillator
- Output Type: CMOS Output
- Package: SMD Crystal Oscillators
- Compliance: RoHS Compliant / Pb Free
- Origin: Fujian, China
Technical Specifications
| Specification | Value | Unit |
|---|---|---|
| Model | 8ESC160C0033L | |
| Nominal Frequency | 16.000000 | MHz |
| Tolerance @ 25 Degree | 10 | ppm |
| Stability over Operation Temp. | 20 | ppm |
| Aging | 3 | ppm/year |
| Operating Temperature Range | -4085 | |
| Storage Temperature Range | -55125 | |
| Supply Voltage (Vdd) | 1.83.3 | Vdc |
| Supply Current (Icc) | 5 | mA max |
| Standby current | 1.8 | A max |
| Output State Control | Enable/disable | |
| Enable Voltage High | 70%Vdd min | |
| Disable Voltage Low | 30%Vdd max | |
| Rise/Fall Time | 5 | ns max |
| Output Voltage VOL | 10%VDD | |
| Output Voltage VOH | 90%VDD | |
| Output Load | 15 | pF max |
| Output Waveform | CMOS | |
| Output Symmetry | 5010% | |
| Start-up Time | 16 | ms max |
| Fundamental Oscillation mode | Level 1 | |
| MSL Phase Jitter(12KHz20MHz) | 8 5010% | ps max |
| Dimensions | 3.2x2.5x1.0mm | |
| Product No. | 8ESC160C0033L | |
| Product Weight | 29.568 | mg |
Reflow Condition
Soldering profile: Preheat zone 1: 150180, 9030s. Soldering zone: 230 or more, 3010s. Peak: 250+50.
Soldering iron method: Bit temperature: 35010. Application time of soldering iron: 3+1 s.
Packing
EIA-481-2 standard packing.
Reliability Specifications
Standard test condition (TEMP.: 2015. Relative humidity: 6520%). For any discrepancy in GO/NG, test will be done at TEMP. 252. R.H. 655%.
| Item | Test Method | Specification |
|---|---|---|
| Drop | GB/T 2423.8-1995, Method Ed | Free drop to the wooden plate from 1.0 m heights for 3 times. Frequency change after test5ppm. No visible damages. |
| Vibration | GB/T 2423.10-1995, Method Fc | Apply 0.75mm vibration at sweep frequency 10500 Hz, for 2h. 10 cycles in each direction of 3 axis. Measurement taken after 1 hour. Frequency change after test5ppm. |
| Resistance to Soldering Heat | GB/T 2423.28-2005, Test Tb Method 1B | In 255 5 solder bath for 2 0.5 seconds. Measurement taken after DUT being left at room temperature for 242 hours. Frequency change after test5ppm. Terminals shall be covered more then 95% with solder. No visible damage. |
| Temperature Cycle | GB/T2423.22-2002, Method Nb | 10 cycles from -25C to 85C. Measurement taken after DUT being left at room temperature for 242 hours. Frequency change after test5ppm. No visible damages. |
| Low Temperature Storage | GB/T 2423.1-2001, Method Aa | Spending 72 hrs at -55C3C constant temperature. Measurement taken after DUT being left at room temperature for 242 hours. Frequency change after test5ppm. No visible damages. |
| Humidity | GB/T 2423.3-2006, Method Cab | Spending 96 hrs at 40 C 3 C, with 90 3% R.H. Measurement taken after DUT being left at room temperature for 242 hours. Frequency change after test5ppm. No visible damages. |
| Shock | GB/T 2423.5-1995, Method Ea | Peak 1000m/s2, normal width 6ms half sine wave form, 3.7m/s, 3 perpendicular axis of samples, 3 cycles /direction, total 18 cycles. Measurement taken after 1 hour. Frequency change after test5ppm. No visible damages. |
| High Temperature Storage | GB/T 2423.2-2001, Method Ba | Spending 72 hrs at 125C3C constant temperature. Measurement taken after DUT being left at room temperature for 242 hours. Frequency change after test5ppm. No visible damages. |
| Solderability | GB/T 2423.28-2005, Method Tc | Mount on a glass-epoxy board (100x50x1.6mm), then bend to 2mm displacement (velocity 1mm/sec) and keep for 5 seconds. or pulling force 0.5 kg for at least 60 seconds. Frequency change after test5ppm. No visible damages. Terminals shall be covered more then 95% with solder. |
| Terminal Strength | JIS-C- 6429 Method 1 & 2 | Passed through the re-flow oven under the following condition. Preheat to 150 C5C for 60 to 120sec, and peak 265 C5C for 10s3sec. Measurement taken after DUT being left at room temperature for at 242 hours. Frequency change after test5ppm. No visible damages. |
Material Composition Declaration
| No. | Name of Part | Material Name | Constituent name | CAS No. | Material Analysis(%) |
|---|---|---|---|---|---|
| 1 | Base | Ceramics | Al2O3 | 1344-28-1 | 63.88% |
| SiO2 | 14464-46-1 | 3.79% | |||
| Cr2o3 | 1308-38-9 | 1.29% | |||
| Mo | 7439-33-7 | 1.00% | |||
| Fe | 7440-33-7 | 9.25% | |||
| Ni | 7439-89-6 | 8.85% | |||
| Co | 7440-02-0 | 4.75% | |||
| Ag | 7440-48-4 | 2.98% | |||
| Cu | 7440-22-4 | 2.80% | |||
| 2 | Lid | Kovar | Metallization W | 7440-50-8 | 1.04% |
| Au | 7440-02-0 | 0.24% | |||
| Ni | 7440-57-5 | 0.13% | |||
| Fe | 7439-89-6 | 54.00% | |||
| Co | 7440-48-4 | 17.02% | |||
| Ni | 7440-02-0 | 28.32% | |||
| Epoxy | Ni | 7440-02-0 | 0.66% | ||
| 3 | Adhesive Resin | Conductive Resin | - | - | 100.00% |
| 4 | Blank | Quartz | SiO2 Silicon oxide | 14808-60-7 | 100.00% |
| 5 | Wire | Gold | Au Gold | 7440-57-5 | 100.00% |
| 6 | IC | Silicon | Silicon | 7440-21-3 | 100.00% |
| 7 | Electrode | Electrode | Ag Silver | 7440-22-4 | 100.00% |
| Silver | Silver | 7440-22-4 | 74.00% | ||
| Ethyl alcohol | Ethyl alcohol | 64-17-5 | 0.60% | ||
| Bisphenol A-epichlorohydrin polymer | Bisphenol A-epichlorohydrin polymer | 25068-38-6 | 0.60% | ||
| Xylenes (o-, m-, p-isomers) | Xylenes (o-, m-, p-isomers) | 1330-20-7 | 0.60% | ||
| Ethylbenzene | Ethylbenzene | 100-41-4 | 0.06% | ||
| Silicone resin | Silicone resin | - | 8.62% | ||
| Silica | Silica | - | 8.52% | ||
| Petroleum solvents | Petroleum solvents | - | 7.00% |
2512081627_CHANGXING-ELECTRONICS-8ESC160C0033L_C48927809.pdf
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