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quality 8 MHz Quartz Crystal Resonator CHANGXING ELECTRONICS 9ASC080G0012L SMD Glass Sealing Component factory
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quality 8 MHz Quartz Crystal Resonator CHANGXING ELECTRONICS 9ASC080G0012L SMD Glass Sealing Component factory
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Specifications
Normal temperature Frequency Tolerance:
±10ppm
Frequency Stability:
±30ppm
Load Capacitance:
12pF
Operating Temperature:
-40℃~+85℃
Equivalent Series Resistance(ESR):
-
Frequency:
8MHz
Mfr. Part #:
9ASC080G0012L
Package:
SMD5032-2P
Key Attributes
Model Number: 9ASC080G0012L
Product Description

Product Overview

The CHANGXING 9ASC080G0012L is a 5.0x3.2x1.2mm SMD Glass Sealing Quartz Crystal Resonator from the 9A Series. Designed for automatic mounting and reflow soldering, it offers high reliability, tight tolerance, and stability. This crystal resonator is an ideal choice for portable PCs, PDAs, DSCs, and USB interface cards, providing a reasonable cost and good delivery performance. It features a Pb content in sealing glass exempted by RoHS directive.

Product Attributes

  • Brand: CHANGXING ELECTRONICS CO.,LTD.
  • Product Model: Glass5032 2PIN 8.000000MHz / 9ASC080G0012L
  • Series: 9A Series
  • Origin: Fujian, China
  • Type: Quartz Crystal Resonator
  • Sealing: SMD Glass Sealing
  • RoHS Exemption: Contains Pb in sealing glass exempted by RoHS directive.
  • Marking: LOGO, Nominal Frequency (MHz), Line Code, Last three digits of batch number, Year-Month Code (4-year cycle)

Technical Specifications

Parameter Specification Notes
Nominal Frequency 8.000000 MHz
Oscillation Mode Fund
Load Capacitance 12 pF
Frequency Tolerance (at 25) 10 ppm
Frequency Tolerance Over Operating Temp. Range 30 ppm
Aging (1st Year) 3
Drive Level 100 uW Max.
Operating Temperature -40 to +85
Storage Temperature Range -55 to +125
Effective Resistance (Rr) 100 Max.
Shunt Capacitance (C0) 5 pF Max.
Insulation Resistance 500 M Min. at DC 100V
Crystal Cutting Type AT CUT (thickness shear mode)
Dimensions (L x W x H) 5.0 x 3.2 x 1.2 mm SMD
Reel Quantity 1,000 pcs per reel (WHITE)

Packing

EIA-481-2 Standard Reel Quantity: 1,000 pcs per reel (WHITE)

Reliability Specifications

1. Mechanical Endurance

  • Mechanical Shock: MIL-STD-202F, 1000 G, 0.5m sec.
  • Vibration: MIL-STD-883E, 10-2000 Hz, 1.52 mm/20G
  • Drop Test: JIS C6701, 75 cm height on concrete floor

2. Environmental Endurance

  • Resistance To Soldering Heat: MIL-STD-202F, 260 5 for 10 1 sec.
  • High Temp & Humidity: JIS C5023, 85, RH 85%, 1000Hrs
  • Thermal Shock: MIL-STD-883E, 100 cycles
  • High Temp. Storage: MIL-STD-883E, +125 for 1000 12 hours
  • Low Temp. Storage: MIL-STD-883E, -40 for 1000 12 hours
  • Solderability: MIL-STD-883E, 260 5, 5 1 seconds
  • Gross Leak: MIL-STD-883E, Test Pressure: 2Kg / cm
  • Fine Leak: MIL-STD-883E, Helium Bombing 4.5 Kgf / cm for 2 hr

Material Composition Declaration

Part Material Name Material Mass (mg) Material Mass (%) Constituent Name CAS No. Material Analysis (%)
Base (Ceramics) Al2O3 92.41% Aluminum oxide 1344-28-1
SiO2 4.30% Silicon oxide 14808-60-7
Cr2O3 1.51% Chromium Oxide 1308-38-9
MgO 0.69% Magnesium Oxide 1309-48-4
CaO 1.09% Cclcium oxide 1305-78-8
Total Base Mass 25.446 48.15%
Adhesive (Polymer) 0.340 0.64%
Petroleum solvent 5.00%
Silicone resin 15.00%
Electrode (Metal) W (Tungsten) 100.00% Tungsten 7440-33-7
Au (Gold) 17.69% Gold 7440-57-5
Ni (Nickel) 82.31% Nickel 7440-02-0
Total Electrode Mass 0.06 0.11%
Ag (Silver) 75.00% Silver 7440-22-4
Cr (Chromium) 5.56% Chromium 7440-47-3
Ag (Silver) 94.44% Silver 7440-22-4
Plating (Metal) PbO (Lead oxide) 57.29% Lead oxide 1317-36-8
PbF2 (Lead fluorid) 19.29% Lead fluorid 7783-46-2
Bi2O3 (Bismuth oxide) 5.30% Bismuth oxide 1304-76-3
Nb2O5 (Niobium oxide) 4.30% Niobium oxide 1313-96-8
B2O3 (Boron oxide) 2.30% Boron oxide 1303-86-2
ZnO (Zinc oxide) 2.30% Zinc oxide 1314-13-2
CuO (Copper oxide) 1.30% Copper oxide 1317-38-0
CaO (Cclcium oxide) 0.30% Cclcium oxide 1305-78-8
TiO2 (Titanium oxide) 5.30% Titanium oxide 13463-67-7
Fe2O3 (Iron oxide) 2.30% Iron oxide 1309-37-1
Total Plating Mass 0.412 0.78%
Glass Cover (Glass) Al2O3 84.12% Aluminum oxide 1344-28-1
MnO2 2.87% Manganese oxide 1313-13-9
SiO2 2.87% Silicon oxide 14808-60-7
TiO2 5.22% Titanium oxide 13463-67-7
Cr2O3 1.91% Chromium oxide 1308-38-9
Fe2O3 2.06% Iron oxide 1309-37-1
MgO 0.48% Magnesium oxide 1309-48-4
Co3O4 0.48% Cobalt oxide 1308-06-1
Total Glass Cover Mass 15.248 28.85%
Quartz Chip SiO2 100.00% Silicon oxide 14808-60-7
Total Quartz Chip Mass 1.500 2.84%

2504101957_CHANGXING-ELECTRONICS-9ASC080G0012L_C46613795.pdf

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