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Specifications
Normal temperature Frequency Tolerance:
±10ppm
Voltage - Supply:
1.8V~3.3V
Operating Temperature:
-40℃~+85℃
Frequency:
32MHz
Mfr. Part #:
8ESC320C0033L
Package:
SMD3225-4P
Key Attributes
Model Number:
8ESC320C0033L
Product Description
Product Overview
The CHANGXING ELECTRONICS CO.,LTD. 8ESC320C0033L is a compact SMD crystal oscillator designed for IT products. It features ultra-small seam-sealed units suitable for applications in WLAN, Bluetooth, DSC, and DSL. This CMOS output oscillator offers a tri-state function and is RoHS Compliant / Pb Free.
Product Attributes
- Brand: CHANGXING ELECTRONICS CO.,LTD.
- Product Line: 8E Series
- Origin: Fujian Province, China
- Certifications: RoHS Compliant / Pb Free
- Output Type: CMOS
Technical Specifications
| Specification | Value | Unit | Notes |
|---|---|---|---|
| Nominal Frequency | 32.000000 | MHz | |
| Tolerance @ 25 Degree | 10 | ppm | |
| Stability over Operation Temp. | 20 | ppm | -4085 |
| Supply Voltage (Vdd) | 1.83.3 | Vdc | |
| Supply Current (Icc) | 5 | mA max | |
| Standby current | 8 | A max | |
| Rise/Fall Time | 5 | ns max | |
| Output Load | 15 | pF max | |
| Start-up Time | 5 | ms max | |
| Aging | 3 | ppm/year | |
| Operating Temperature Range | -4085 | ||
| Storage Temperature Range | -55125 | ||
| Phase Jitter(12KHz20MHz) | 5010% | ps max | |
| Output Symmetry | 10%VDD | ||
| Tri-state Function Available | Enable/disable | ||
| Dimensions | 3.22.51.0mm | SMD | |
| Product Number | 8ESC320C0033L | ||
| Model | OSC 3225 | ||
| Production Weight | 29.568 | mg |
Reflow Condition
| Parameter | Value | Unit | Notes |
|---|---|---|---|
| Peak Temperature | 250+5 | ||
| Soldering Zone Temperature | 230 | 3010s | |
| Pre-heating Zone Temperature | 150180 | 9030s |
Reliability Specifications
| Item | Test Method | Specification |
|---|---|---|
| Drop | GB/T 2423.8-1995, Method Ed | Frequency change after test5ppm. No visible damages. |
| Vibration | GB/T 2423.10-1995, Method Fc | Frequency change after test5ppm. No visible damages. |
| Resistance to Soldering Heat | GB/T 2423.28-2005, Test Tb Method 1B | Frequency change after test5ppm. No visible damages. Terminals shall be covered more than 95% with solder. |
| Temperature Cycle | GB/T2423.22-2002, Method Nb | Frequency change after test5ppm. |
| Low Temperature Storage | GB/T 2423.1-2001, Method Aa | Frequency change after test5ppm. |
| Humidity | GB/T 2423.3-2006, Method Cab | Frequency change after test5ppm. |
| Shock | GB/T 2423.5-1995, Method Ea | Frequency change after test5ppm. No visible damages. |
| High Temperature Storage | GB/T 2423.2-2001, Method Ba | Frequency change after test5ppm. |
| Solderability | GB/T 2423.28-2005, Method Tc | Terminals shall be covered more than 95% with solder. |
| Terminal Strength | JIS-C-6429 Method 1 & 2 | No visible damages. |
Material Composition Declaration
| No. | Name of Part | Material Name | Constituent name | CAS No. | Material Analysis(%) |
|---|---|---|---|---|---|
| 1 | Base | Ceramics | Al2O3 | 1344-28-1 | 63.88% |
| SiO2 | 14464-46-1 | 3.79% | |||
| Cr2o3 | 1308-38-9 | 1.29% | |||
| Mo | 7439-98-7 | 1.00% | |||
| Fe | 7440-33-7 | 9.25% | |||
| Ni | 7439-89-6 | 8.85% | |||
| Co | 7440-02-0 | 4.75% | |||
| Ag | 7440-48-4 | 2.98% | |||
| Cu | 7440-22-4 | 2.80% | |||
| Metallization | W | 7440-50-8 | 1.04% | ||
| Au | 7440-02-0 | 0.24% | |||
| Ni | 7440-57-5 | 0.13% | |||
| Fe | 7439-89-6 | 54.00% | |||
| Co | 7440-48-4 | 17.02% | |||
| Ni | 7440-02-0 | 28.32% | |||
| Plate | Ni | 7440-02-0 | 0.66% | ||
| 2 | Lid | Kovar | |||
| Epoxy | Adhesive Resin | - | 100.00% | ||
| Conductive Resin | Silicone resin | - | 8.62% | ||
| Silica | - | 8.52% | |||
| Petroleumsolvents | - | 7.00% | |||
| 3 | Blank | Quartz | Silicon oxide | 14808-60-7 | 100.00% |
| 4 | Wire | Gold | Gold | 7440-57-5 | 100.00% |
| 5 | IC | Silicon | Silicon | 7440-21-3 | 100.00% |
| 6 | Electrode | Electrode | Ag | 7440-22-4 | 100.00% |
| Silver | 7440-22-4 | 74.00% | |||
| Ethyl alcohol | 64-17-5 | 0.60% | |||
| Bisphenol A-epichlorohydrin polymer | 25068-38-6 | 0.60% | |||
| Xylenes (o-, m-, p-isomers) | 1330-20-7 | 0.60% | |||
| Ethylbenzene | 100-41-4 | 0.06% |
2512081627_CHANGXING-ELECTRONICS-8ESC320C0033L_C48927815.pdf
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