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quality Compact SMD Crystal Oscillator CHANGXING ELECTRONICS 4ESC320C0033L CMOS Output RoHS Compliant Device factory
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quality Compact SMD Crystal Oscillator CHANGXING ELECTRONICS 4ESC320C0033L CMOS Output RoHS Compliant Device factory
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Specifications
Normal temperature Frequency Tolerance:
±10ppm
Voltage - Supply:
1.8V~3.3V
Operating Temperature:
-40℃~+85℃
Frequency:
32MHz
Mfr. Part #:
4ESC320C0033L
Package:
SMD2520-4P
Key Attributes
Model Number: 4ESC320C0033L
Product Description

Product Overview

The CHANGXING ELECTRONICS CO.,LTD. 2.5x2.0mm SMD Crystal Oscillators (Model 4ESC320C0033L) are ultra-small, seam-sealed clock crystal oscillator units designed for IT product applications including WLAN, Bluetooth, DSC, and DSL. These CMOS output oscillators offer a tri-state function and are RoHS Compliant and Pb Free.

Product Attributes

  • Brand: CHANGXING ELECTRONICS CO.,LTD.
  • Product Series: 4E Series
  • Output Type: CMOS Output
  • Certifications: RoHS Compliant / Pb Free
  • Origin: Fujian Province, China
  • Mounting Type: SMD

Technical Specifications

Specification Value Unit Condition/Notes
Nominal Frequency 32.000000 MHz
Tolerance @ 25 Degree 10 ppm
Stability over Operation Temp. 20 ppm -4085
Aging 3 ppm/year
Operating Temperature Range -55125
Storage Temperature Range 5010%
Supply Voltage (Vdd) 1.83.3 Vdc
Supply Current (Icc) mA max
Standby current A max
Output Load 10 pF max
Output Waveform CMOS
Output Symmetry % 10%VDD to 90%VDD
Rise/Fall Time ps max
Output Voltage VOL
Output Voltage VOH
Enable Voltage High 70%Vdd min
Disable Voltage Low 30%Vdd max
Start-up Time 5 ms max
Phase Jitter(12KHz 20MHz)
Fundamental Oscillation mode
Dimensions (L x W x H) 2.5 x 2.0 x 0.8 mm
MSL Level 1 IPC/JEDEC J-STD-033C
Reflow Condition Value Unit Notes
Peak Temperature 250+50
Soldering Zone (230) 30 10 s
Pre-heating Zone 1 (150180) 90 30 s
Soldering Iron Method Value Unit Notes
Bit Temperature 350 10
Application Time 3 1 s
Reliability Test Item Test Method Frequency Change After Test Notes
Resistance to Soldering Heat GB/T 2423.28-2005, Test Tb Method 1B 5ppm Passed through re-flow oven (Preheat 150C5C for 60-120s, Peak 265C5C for 10s3s). Measurement after 242 hours at room temp.
Solderability GB/T 2423.28-2005, Method Tc 255 5 solder bath for 2 0.5 seconds. Terminals shall be covered >95% with solder. No visible damage.
Terminal Strength JIS-C-6429 Method 1 & 2 5ppm Mount on glass-epoxy board, bend to 2mm displacement (1mm/sec) and hold 5s; OR pulling force 0.5 kg for 60s. No visible damages.
Drop GB/T 2423.8-1995, Method Ed 5ppm Free drop from 1.0 m onto wooden plate, 3 times. Measurement after 242 hours at room temp.
Vibration GB/T 2423.10-1995, Method Fc 5ppm Sweep frequency 10500 Hz at 0.75mm vibration, for 2h. 10 cycles each axis. Measurement after 1 hour.
Shock GB/T 2423.5-1995, Method Ea 5ppm 1000m/s, 6ms half sine wave, 3.7m/s, 3 perpendicular axes, 3 cycles/direction, total 18 cycles. Measurement after 1 hour.
Humidity GB/T 2423.3-2006, Method Cab 5ppm 96 hrs at 40 C 3 C, 90 3% R.H. Measurement after 242 hours at room temp.
Temperature Cycle GB/T2423.22-2002, Method Nb 5ppm 10 cycles from -25C to 85C. Measurement after 242 hours at room temp.
High Temperature Storage GB/T 2423.2-2001, Method Ba 5ppm 72 hrs at 125C3C. Measurement after 242 hours at room temp.
Low Temperature Storage GB/T 2423.1-2001, Method Aa 5ppm 72 hrs at -55C3C. Measurement after 242 hours at room temp.
Part Material Name Constituent Name CAS No. Material Analysis (%)
Base (Ceramics) Aluminum oxide Al2O3 1344-28-1 63.88%
SiO2 14464-46-1 3.79%
Cr2o3 1308-38-9 1.29%
Mo 7439-98-7 1.00%
Fe 7440-33-7 9.25%
Ni 7439-89-6 8.85%
Co 7440-02-0 4.75%
Ag 7440-48-4 2.98%
Cu 7440-22-4 2.80%
Metallization Tungsten 7440-50-8 1.04%
Gold 7440-02-0 0.24%
Ni 7440-57-5 0.13%
Fe 7439-89-6 54.00%
Plate (Kovar) Co 7440-48-4 17.02%
Ni 7440-02-0 28.32%
Ni (Plating) 7440-02-0 0.66%
Adhesive Resin Epoxy Bisphenol A-epichlorohydrin polymer 25068-38-6 0.60%
Lid Conductive Resin Silicone resin - 8.62%
Silica - 8.52%
Blank (Wafer) Quartz Silicon oxide 14808-60-7 100.00%
Wire Gold Au 7440-57-5 100.00%
IC Silicon Silicon 7440-21-3 100.00%
Electrode Silver Ag 7440-22-4 100.00%
Silver 7440-22-4 74.00%
Ethyl alcohol 64-17-5 0.60%
Bisphenol A-epichlorohydrin polymer 25068-38-6 0.60%
Xylenes (o-, m-, p-isomers) 1330-20-7 0.60%
Ethylbenzene 100-41-4 0.06%

2512081627_CHANGXING-ELECTRONICS-4ESC320C0033L_C48927843.pdf

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