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quality SMD package crystal oscillator with tri state function CHANGXING ELECTRONICS 3ESC480C0033L RoHS compliant Pb free device factory
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quality SMD package crystal oscillator with tri state function CHANGXING ELECTRONICS 3ESC480C0033L RoHS compliant Pb free device factory
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Specifications
Normal temperature Frequency Tolerance:
±10ppm
Voltage - Supply:
1.8V~3.3V
Operating Temperature:
-40℃~+85℃
Frequency:
48MHz
Mfr. Part #:
3ESC480C0033L
Package:
SMD2016-4P
Key Attributes
Model Number: 3ESC480C0033L
Product Description

Product Overview

The CHANGXING ELECTRONICS CO.,LTD. 2.0x1.6mm SMD Crystal Oscillator (Model: 3ESC480C0033L) is an ultra-small, seam-sealed clock crystal oscillator unit designed for IT product applications including WLAN, Bluetooth, DSC, and DSL. It features CMOS output, a tri-state function, and is RoHS Compliant/Pb Free.

Product Attributes

  • Brand: CHANGXING ELECTRONICS CO.,LTD.
  • Origin: Fujian Province, China
  • Series: 3E Series
  • Output Type: CMOS Output
  • Compliance: RoHS Compliant / Pb Free
  • Sealing: Seam sealed
  • Package Type: SMD

Technical Specifications

Specification Value Unit Notes
Nominal Frequency 48.000000 MHz
Tolerance @ 25 Degree 10 ppm
Stability over Operation Temp. 20 ppm
Input Voltage (VDD) 1.83.3 Vdc
Input Current (IDD) 5 A max @ 10%VDD
Standby current 5 A max
Output Load 15 pF max
Rise/Fall Time 5 ns max
Output Voltage VOL < 10%VDD V
Output Voltage VOH > 90%VDD V
Start-up Time 10 ms max
Aging 3 ppm/year
Operating Temperature Range -4085
Storage Temperature Range -55125
Jitter (rms) 5010% ps
Output State Control Enable/disable
Output Waveform COMS
Output Symmetry %
Fundamental Oscillation mode
MSL Level 1 IPC/JEDEC J-STD-033C
Dimensions 2.0x1.6x0.75 mm
Product No. 3ESC480C0033L
Model 2.01.6 OSC 48.000000MHz
Product Weight 8.144 mg For OSC 2016

Reflow Condition

Temperature profile for reflow soldering:
Peak: 250+50
Soldering zone: 230 or more, 3010s.
Pre-heating zone 1: 150180, 9030s

Soldering iron method:
Bit temperature: 35010
Application time of soldering iron: 3+1 s

Packing

EIA-481-2

Reliability Specifications

Standard test condition (TEMP.: 2015. Relative humidity: 6520%). For any discrepancy in GO/NG, test will be done at TEMP. 252. R.H. 655%.

ITEM TEST METHOD SPECIFICATION
High Temperature Storage GB/T 2423.2-2001, Method Ba Spending 72 hrs at 125C3C constant temperature. Measurement taken after DUT being left at room temperature for 242 hours. Frequency change after test5ppm.
Low Temperature Storage GB/T 2423.1-2001, Method Aa Spending 72 hrs at -55C3C constant temperature. Measurement taken after DUT being left at room temperature for 242 hours. Frequency change after test5ppm.
Humidity GB/T 2423.3-2006, Method Cab Spending 96 hrs at 40 C 3 C, with 90 3% R.H. Measurement taken after DUT being left at room temperature for 242 hours. Frequency change after test5ppm.
Temperature Cycle GB/T2423.22-2002, Method Nb 10 cycles from -25C to 85C. Measurement taken after DUT being left at room temperature for 242 hours. Frequency change after test5ppm.
Shock GB/T 2423.5-1995, Method Ea Peak 1000m/s, normal width 6ms half sine wave form, 3.7m/s, 3 perpendicular axis of samples, 3 cycles /direction, total 18 cycles. Measurement taken after 1 hour. Frequency change after test5ppm.
Drop GB/T 2423.8-1995, Method Ed Free drop to the wooden plate from 1.0 m heights for 3 times. Frequency change after test5ppm. No visible damages.
Vibration GB/T 2423.10-1995, Method Fc Apply 0.75mm vibration at sweep frequency 10500 Hz, for 2h. 10 cycles in each direction of 3 axis. Measurement taken after 1 hour. Frequency change after test5ppm.
Resistance to Soldering Heat GB/T 2423.28-2005, Test Tb Method 1B In 255 5 solder bath for 2 0.5 seconds. There is noneed to do functioned test. Frequency change after test5ppm. No visible damages. Terminals shall be covered more than 95% with solder.
Solderability GB/T 2423.28-2005, Method Tc Passed through the re-flow oven under the following condition. Preheat to 150 C5C for 60 to 120sec, and peak 265 C5C for 10s3sec. Measurement taken after DUT being left at room temperature for at 242 hours. Frequency change after test5ppm. No visible damages.
Terminal Strength JIS-C- 6429 Method 1 & 2 Mount on a glass-epoxy board (100x50x1.6mm), then bend to 2mm displacement (velocity 1mm/sec) and keep for 5 seconds. or pulling force 0.5 kg for at least 60 seconds. Frequency change after test5ppm. No visible damage.

Material Composition Declaration

No. Name of Part Material Name Constituent name CAS No. Material Analysis (%)
1 Base Ceramics Al2O3 1344-28-1 63.88%
SiO2 14464-46-1 3.79%
Cr2o3 1308-38-9 1.29%
Mo 7439-33-7 1.00%
Fe 7440-33-7 9.25%
Ni 7439-89-6 8.85%
Co 7440-02-0 4.75%
Ag 7440-48-4 2.98%
Cu 7440-22-4 2.80%
2 Lid Kovar Fe 7440-33-7 54.00%
Co 7440-48-4 17.02%
Ni 7440-02-0 28.32%
3 Epoxy Conductive Resin Adhesive Resin - 100.00%
4 Blank Quartz SiO2 14808-60-7 100.00%
5 Wire Gold Au 7440-57-5 100.00%
6 IC Silicon Silicon 7440-21-3 100.00%
7 Electrode Electrode Ag 7440-22-4 100.00%
Silver 7440-22-4 74.00%
Ethyl alcohol 64-17-5 0.60%
Bisphenol A-epichlorohydrin polymer 25068-38-6 0.60%
Xylenes (o-, m-, p-isomers) 1330-20-7 0.60%
Ethylbenzene 100-41-4 0.06%
Silicone resin - 8.62%
Silica - 8.52%
Petroleum solvents - 7.00%
8 Plate Kovar W 7440-50-8 1.04%
Au 7440-02-0 0.24%
Ni 7440-57-5 0.13%
Ni 7440-02-0 0.66%

2508051500_CHANGXING-ELECTRONICS-3ESC480C0033L_C48927832.pdf

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