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quality MEMS Oscillator MSTM MST8011AI-21-33E12.000000 with LVCMOS Compatible Output and High Shock Resistance factory
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quality MEMS Oscillator MSTM MST8011AI-21-33E12.000000 with LVCMOS Compatible Output and High Shock Resistance factory
>
Specifications
Frequency Stability:
±20ppm
Output Type:
LVCMOS;HCMOS
Voltage - Supply:
3.3V
Frequency:
12MHz
Mfr. Part #:
MST8011AI-21-33E12.000000
Model Number:
MST8011AI-21-33E12.000000
Package:
SMD3225-4P
Key Attributes
Product Description

MST8011 Low Power Programmable Oscillator

The MST8011 is a low-power, programmable oscillator offering precise frequency selection from 1 MHz to 180 MHz with 1 Hz accuracy. It is 100% pin-compatible and a direct replacement for traditional quartz oscillators. This MEMS-based oscillator boasts excellent total frequency stability, low power consumption (4.2 mA typical at 1.8V), and a wide VDD supply range (1.62V to 3.63V). It is designed for high shock and vibration resistance, with low G-sensitivity. Features like standby mode for extended battery life, fast 5 ms startup time, and LVCMOS/HCMOS compatible output make it suitable for a wide range of demanding applications.

Product Attributes

  • Brand: MST Microelectronics (Shenzhen) Co., Ltd.
  • Origin: Shenzhen
  • Certifications: RoHS, REACH, Pb-free, Halogen-free

Technical Specifications

ParameterSymbolMinTypicalMaxUnitConditions
Frequency & Stability
Output Frequency RangeF1180MHz
Frequency StabilityF_stab-2020ppmIncludes initial tolerance at 25C, first year aging at 25C, variations in operating temperature, rated supply voltage, and load.
Operating Temperature RangeT_use-2070Commercial Grade
Operating Temperature RangeT_use-4085Industrial Grade
Operating Temperature RangeT_use-40105Extended Industrial Grade
Power Supply & Consumption
Power Supply VoltageVDD_1.81.621.81.98V
Power Supply VoltageVDD_3.32.973.33.63V
Power Supply Voltage RangeVDD_YY1.623.63V
Current ConsumptionIdd4.2mANo load, F = 20 MHz, VDD = 1.8V
Current ConsumptionIdd4.5mANo load, F = 20 MHz, VDD = 2.5V
Current ConsumptionIdd4.9mANo load, F = 20 MHz, VDD = 2.8V to 3.3V
Standby CurrentI_std0.6AST = GND, VDD = 1.8V, weak pull-down
Standby CurrentI_std0.8AST = GND, VDD = 2.5V, weak pull-down
Standby CurrentI_std1.5AST = GND, VDD = 2.8V to 3.3V, weak pull-down
Output Characteristics
Duty CycleDC455055%Full voltage range
Output Low VoltageVOLVDD0.1VIOL = 2 mA (VDD_1.8)
Output Low VoltageVOLVDD0.1VIOL = 3 mA (VDD_2.5 and VDD_2.8)
Output Low VoltageVOLVDD0.1VIOL = 4 mA (VDD_3.0 and VDD_3.3)
Output High VoltageVOHVDD0.9VIOL = -2 mA (VDD_1.8)
Output High VoltageVOHVDD0.9VIOL = -3 mA (VDD_2.5 and VDD_2.8)
Output High VoltageVOHVDD0.9VIOL = -4 mA (VDD_3.0 and VDD_3.3)
Rise and Fall TimeTr, Tf1.7nsVDD = 2.5V, 2.8V, 3.0V or 3.3V, 20% to 80%
Rise and Fall TimeTr, Tf2.2nsVDD =1.8V, 20% to 80%
Rise and Fall TimeTr, Tf1.9nsVDD = 2.25V to 3.63V, 20% to 80%
Timing
Startup TimeT_start5.0msMeasured from the time VDD reaches its rated minimum
Enable/Disable TimeT_oe130nsF= 180 MHz. Other frequencies, Toe = 100 ns + 3cycles
Resume TimeT_resume5.0msMeasured from ST pin exceeding 50% threshold
Jitter
RMS Period JitterT_jitt2.2psF = 75 MHz, VDD = 2.5V, 2.8V, 3.0V or 3.3V
RMS Period JitterT_jitt2.8psF = 75 MHz, VDD = 1.8V
Peak-to-peak Period JitterT_pk23.3psF = 75 MHz, VDD = 2.5V, 2.8V, 3.0V or 3.3V
Peak-to-peak Period JitterT_pk28.5psF = 75 MHz, VDD = 1.8V
RMS Random JitterT_phj0.5psF= 75 MHz, integration bandwidth = 900 kHz to 7.5 MHz
RMS Random JitterT_phj1.32psF = 75 MHz, integration bandwidth = 12 kHz to 20 MHz
Environmental & Mechanical
Shock Resistance>60,000gMIL-STD-883F, Method2002
Vibration Resistance>70gMIL-STD-883F, Method 2007
G-Sensitivity<0.1ppb/g

Applications

  • DVR, IP High-Definition Cameras, Tablet PCs, Solid State Drives, Data Centers, Servers, PLCs, Industrial Controls, Power Equipment, New Energy, Medical Equipment, etc.

2507171700_MSTM-MST8011AI-21-33E12-000000_C49374587.pdf

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