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quality Programmable Oscillator MST8011AI 22 33E50 000000 MST8011 Device with Shock and Vibration Resistance factory
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quality Programmable Oscillator MST8011AI 22 33E50 000000 MST8011 Device with Shock and Vibration Resistance factory
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Specifications
Frequency Stability:
±25ppm
Output Type:
LVCMOS;HCMOS
Voltage - Supply:
3.3V
Frequency:
50MHz
Mfr. Part #:
MST8011AI-22-33E50.000000
Model Number:
MST8011AI-22-33E50.000000
Package:
SMD3225-4P
Key Attributes
Product Description

MST8011 Low Power Programmable Oscillator

The MST8011 is a low-power, programmable oscillator offering precise frequency control from 1 MHz to 180 MHz with 1 Hz resolution. It is 100% pin-compatible with traditional quartz oscillators, providing an excellent total frequency stability of 20 ppm. Designed for low power consumption (4.2 mA typical at 1.8V VDD), it supports a wide VDD range (1.62V to 3.63V) and features high shock and vibration resistance. The device includes a standby mode for extended battery life, a fast 5 ms startup time, and LVCMOS/HCMOS compatible outputs. Available in industry-standard packages (2.0x1.6, 2.5x2.0, 3.2x2.5 mm), the MST8011 is RoHS, REACH, Pb-free, and Halogen-free compliant. It is suitable for applications such as DVRs, IP high-definition cameras, tablets, SSDs, data centers, servers, PLCs, industrial controls, power equipment, new energy, and medical devices.

Product Attributes

  • Brand: MST Microelectronics (Shenzhen) Co., Ltd.
  • Origin: Shenzhen
  • Certifications: RoHS, REACH, Pb-free, Halogen-free

Technical Specifications

ParameterMinTypicalMaxUnitConditions
Output Frequency Range1-180MHz-
Frequency Stability (Total)-20-20ppmIncludes initial tolerance, aging, temperature, voltage, and load variations.
Operating Temperature Range-20-70Commercial Grade
Operating Temperature Range-40-85Industrial Grade
Operating Temperature Range-40-105Extended Industrial Grade
Power Supply Voltage (VDD)1.62-3.63V-
Current Consumption (Idd)-4.2-mANo Load, F=20 MHz, VDD=1.8V
Current Consumption (Idd)-4.5-mANo Load, F=20 MHz, VDD=2.5V
Current Consumption (Idd)-4.9-mANo Load, F=20 MHz, VDD=2.8V to 3.3V
Standby Current (I_std)-0.6-AST=GND, VDD=1.8V, Weak Pull-down
Standby Current (I_std)-0.8-AST=GND, VDD=2.5V, Weak Pull-down
Standby Current (I_std)-1.5-AST=GND, VDD=2.8V to 3.3V, Weak Pull-down
Duty Cycle (DC)455055%Full Voltage Range
Output Low Voltage (VOL)--0.1 * VDDVIOL conditions vary by VDD
Output High Voltage (VOH)0.9 * VDD--VIOL conditions vary by VDD
Rise/Fall Time (Tr, Tf)-1.7-nsVDD=2.5V-3.3V, 20%-80%
Rise/Fall Time (Tr, Tf)-2.2-nsVDD=1.8V, 20%-80%
Input Low Voltage (VIL)--0.3 * VDDVPin 1, OE or ST
Input High Voltage (VIH)0.7 * VDD--VPin 1, OE or ST
Startup Time (T_start)-5.0-msFrom VDD reaching min rated value
Enable/Disable Time (T_oe)--130nsF=180 MHz
Resume Time (T_resume)-5.0-msFrom ST pin exceeding 50% threshold
RMS Period Jitter (T_jitt)-2.2-psF=75 MHz, VDD=2.5V-3.3V
RMS Period Jitter (T_jitt)-2.8-psF=75 MHz, VDD=1.8V
Peak-to-peak Period Jitter (T_pk)-23.3-psF=75 MHz, VDD=2.5V-3.3V
Peak-to-peak Period Jitter (T_pk)-28.5-psF=75 MHz, VDD=1.8V
RMS Random Jitter (T_phj)-0.5-psF=75 MHz, BW=900kHz-7.5MHz
RMS Random Jitter (T_phj)-1.3-psF=75 MHz, BW=12kHz-20MHz
Shock Resistance>60000--gMIL-STD-883F, Method2002
Vibration Resistance>70--gMIL-STD-883F, Method 2007
G-Sensitivity-<0.1-ppb/g-

2508121550_MSTM-MST8011AI-22-33E50-000000_C50199633.pdf

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