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quality consumption oscillator MSTM MST8011AI-12-33E27.000000 with RoHS REACH Pb free and Halogen free compliance factory
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quality consumption oscillator MSTM MST8011AI-12-33E27.000000 with RoHS REACH Pb free and Halogen free compliance factory
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Specifications
Frequency Stability:
±25ppm
Output Type:
LVCMOS;HCMOS
Voltage - Supply:
3.3V
Frequency:
27MHz
Mfr. Part #:
MST8011AI-12-33E27.000000
Model Number:
MST8011AI-12-33E27.000000
Package:
SMD2520-4P
Key Attributes
Product Description

Product Overview

The MST 8011 is a low-power programmable oscillator offering precise frequency generation from 1 MHz to 156.25 MHz with 1 Hz accuracy. It is 100% pin-compatible with and a direct replacement for quartz oscillators, providing excellent total frequency stability down to 20 ppm. With low power consumption of 4.2 mA (typical) at 1.8V, a wide VDD supply range (1.62V to 3.63V), and high resistance to shock (>60,000 g) and vibration (>70g), the MST 8011 is ideal for demanding applications. Features include a standby mode for extended battery life, a fast 5 ms start-up time, LVCMOS/HCMOS compatible output, and industry-standard packages. It is RoHS, REACH, Pb-free, and Halogen-free compliant.

Product Attributes

  • Brand: MST Microelectronics
  • Origin: Shenzhen, China
  • Certifications: RoHS, REACH, Pb-free, Halogen-free

Technical Specifications

ParameterSymbolMinTypicalMaxUnitConditions
Electrical Characteristics
Output Frequency RangeF156.25MHz
Frequency StabilityF_stab-2020ppmIncludes initial tolerance at 25C, first year aging at 25C, variations in operating temperature, rated supply voltage, and load
Operating Temperature RangeT_use-2070Commercial Grade
Operating Temperature RangeT_use-4085Industrial Grade
Operating Temperature RangeT_use-40105Extended Industrial Grade
Operating Temperature RangeT_use-55125Automotive Grade
Power VoltageVDD_1.81.621.81.98V
Power VoltageVDD_3.32.973.33.63V
Power VoltageVDD_XX2.253.63V
Power VoltageVDD_YY1.623.63V
Current ConsumptionIdd4.2mANo Load, F = 20 MHz, VDD = 1.8V
Current ConsumptionIdd4.5mANo Load, F = 20 MHz, VDD = 2.5V
Current ConsumptionIdd4.9mANo Load, F = 20 MHz, VDD = 2.8V to 3.3V
Standby CurrentI_std0.6AST = GND, VDD = 1.8V, Output weak pull-down
Standby CurrentI_std0.8AST = GND, VDD = 2.5V, Output weak pull-down
Standby CurrentI_std1.5AST = GND, VDD = 2.8V to 3.3V, Output weak pull-down
Duty CycleDC455055%Full voltage range
Output Low VoltageVOLVDD0.1VIOL = 2 mA (VDD_1.8)
Output Low VoltageVOLVDD0.1VIOL = 3 mA (VDD_2.5 and VDD_2.8)
Output Low VoltageVOLVDD0.1VIOL = 4 mA (VDD_3.0 and VDD_3.3)
Output High VoltageVOHVDD0.9VIOL = -2 mA (VDD_1.8)
Output High VoltageVOHVDD0.9VIOL = -3 mA (VDD_2.5 and VDD_2.8)
Output High VoltageVOHVDD0.9VIOL = -4 mA (VDD_3.0 and VDD_3.3)
Rise and Fall TimeTr, Tf1.7nsVDD = 2.5V, 2.8V, 3.0V or 3.3V, 20% to 80%
Rise and Fall TimeTr, Tf1.9nsVDD = 2.25V to 3.63V, 20% to 80%
Rise and Fall TimeTr, Tf2.2nsVDD =1.8V, 20% to 80%
Input Low VoltageVILVDD0.3VPin 1, OE or ST
Input High VoltageVIHVDD0.7VPin 1, OE or ST
Start-up TimeT_start5.0msMeasured from the time VDD reaches its minimum rated value
Enable/Disable TimeT_oe130nsF= 180 MHz. Other frequencies, Toe = 100 ns + 3cycles
Resume TimeT_resume5.0msMeasured from the time ST pin exceeds 50% threshold
RMS Period JitterT_jitt2.2psF = 75 MHz, VDD = 2.5V, 2.8V, 3.0V or 3.3V
RMS Period JitterT_jitt2.8psF = 75 MHz, VDD = 1.8V
Peak-to-peak Period JitterT_pk23.3psF = 75 MHz, VDD = 2.5V, 2.8V, 3.0V or 3.3V
Peak-to-peak Period JitterT_pk28.5psF = 75 MHz, VDD = 1.8V
RMS Random JitterT_phj0.5psF= 75 MHz, Integration Bandwidth = 900 kHz to 7.5 MHz
RMS Random JitterT_phj1.32psF = 75 MHz, Integration Bandwidth = 12 kHz to 20 MHz
Environmental Compliance
Shock ResistanceMIL-STD-883F, Method 2002
Vibration ResistanceMIL-STD-883F, Method 2007
Temperature CyclingJESD22, Method A104
SolderabilityMIL-STD-883F, Method 2003
Moisture Sensitivity Level (MSL)MSL1@ 260C
Absolute Maximum Ratings
Continuous Power Supply VoltageVDD-0.54.0V
Storage Temperature-65150C
ESD (HBM)2000V
Soldering Temperature260C(Follow standard lead-free soldering guidelines)
Junction Temperature150CProlonged exposure may damage the device

Applications

DVR, IP HD Cameras, Tablets, Solid State Drives, Data Centers, Servers, PLCs, Industrial Control, Power Equipment, New Energy, Medical Equipment, etc.


2509051010_MSTM-MST8011AI-12-33E27-000000_C51026282.pdf

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