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quality High Q Multilayer Capacitor Johanson Dielectrics 100R14W225KV4T Suitable for Microwave Applications factory
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quality High Q Multilayer Capacitor Johanson Dielectrics 100R14W225KV4T Suitable for Microwave Applications factory
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Specifications
Voltage Rating:
10V
Capacitance:
2.2uF
Temperature Coefficient:
X7R
Tolerance:
±10%
Mfr. Part #:
100R14W225KV4T
Model Number:
100R14W225KV4T
Package:
0603
Key Attributes
Product Description

Johanson Technology Multi-Layer High-Q Capacitors

These multilayer capacitors are engineered for high-Q and microwave applications, offering superior performance in demanding environments. The series include S-Series for ultra-high Q and NP0 characteristics, L-Series for mid-high Q and NP0 characteristics, E-Series for excellent high-Q performance from HF to Microwave frequencies suitable for high voltage and high current applications, and W-Series for large capacitance values in an ultra-small 0201 package with X7R temperature characteristics. RoHS compliance is standard for all unleaded parts.

Product Attributes

  • Brand: Johanson Technology
  • Certifications: RoHS compliance (standard for unleaded parts)

Technical Specifications

SeriesPart Number ExampleDescriptionCapacitance RangeVoltage RangeTemperature CharacteristicTermination Options
S-SeriesR03S, R07S, R14S, R15SUltra-high Q performance0.1 pF - 100 pF (approx.)6.3 V - 1000 V (varies by model)NP0Ni barrier (Ni/Sn, Ni/Au), Non-Magnetic Pt.-Ag, Non-Magnetic Leaded
L-SeriesR05LMid-high Q performance0.1 pF - 10 pF (approx.)16 V - 1000 V (varies by model)NP0Ni barrier, Non-Magnetic Leaded
E-SeriesS42E, S48E, S58EExcellent high-Q performance from HF to Microwave frequencies. Suitable for high voltage, high current applications.0.1 pF - 10000 pF (approx.)16 V - 10000 V (varies by model)NP0 (High Voltage, High Power)Chip (Ni barrier or Non-Magnetic Pt.-Ag), Non-Magnetic Leaded
W-SeriesR05WLarge capacitance value in an ultra-small 0201 package size.0.1 pF - 100 pF (approx.)16 V - 250 V (varies by model)X7RChip (Ni barrier)

Ordering Information

Part Number Structure Example: 252S48E470KV4E

Key Components:

  • Voltage (DC): 6R3 (6.3V) to 502 (5000V)
  • Case Size: R03 (01005) to S58 (3838)
  • Capacitance (pF): e.g., 470 (47pF)
  • Tolerance: A (0.05pF) to K (10%)
  • Marking: 3 (Cap Code & Tolerance), 4 (No Marking), 6 (EIA Code)
  • Termination: V (Ni/Sn), T (Ni/SnPb), G (Ni/Au), U (Cu/Sn), C (Cu/SnPb), Leaded options
  • Dielectric: S (Ultra High Q NPO), L (High Q NPO), E (Ultra High Q NPO, High Voltage, High Power), T (High Temp 175C Ultra High Q NPO), W (X7R)
  • Packaging: S (Bulk), W (Waffle Pack), Y (Paper 5 Reel), T (Paper 7 Reel), Z (Embossed 5 Reel), E (Embossed 7 Reel)

Mechanical & Environmental Characteristics

CharacteristicSpecificationTest Parameters
SolderabilitySolder coverage 90% of metalized areasPreheat 120-150C for 60 sec., dip in rosin flux, then dip in Sn62 solder @ 2405C for 51 sec.
Resistance to Soldering HeatNo mechanical damage; Capacitance change: 2.5% or 0.25pF; Q>500; I.R. >10 G Ohms; Breakdown voltage: 2.5 x WVDCPreheat device to 80-100C for 60 sec., followed by 150-180C for 60 sec. Dip in 2605C solder for 101 sec. Measure after 242 hour cooling period.
Terminal AdhesionTermination should not pull off; Ceramic should remain undamaged.Linear pull force* exerted on axial leads soldered to each terminal. *0402 2.0lbs, 0603 2.0lbs (min.)
PCB DeflectionNo mechanical damage; Capacitance change: 2% or 0.5pF MaxGlass epoxy PCB: 0.5 mm deflection
Life TestNo mechanical damage; Capacitance change: 3.0% or 0.3 pF; Q>500; I.R. >1 G Ohms; Breakdown voltage: 2.5 x WVDCMIL-STD-202, Method 108l. Applied voltage: 120% of WDVC (for 500VDC) or 100% of WDVC (for 1250VDC). Temperature: 1253C. Test time: 1000+48-0 hours.
Thermal CycleNo mechanical damage(Details not fully provided in source text)

2410121912_Johanson-Dielectrics-100R14W225KV4T_C2917682.pdf

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