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quality Ultra Low Phase Noise Crystal Oscillator ABRACON ABLNO-V-96.000MHZ-T2 for Communication Applications factory
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quality Ultra Low Phase Noise Crystal Oscillator ABRACON ABLNO-V-96.000MHZ-T2 for Communication Applications factory
quality Ultra Low Phase Noise Crystal Oscillator ABRACON ABLNO-V-96.000MHZ-T2 for Communication Applications factory
quality Ultra Low Phase Noise Crystal Oscillator ABRACON ABLNO-V-96.000MHZ-T2 for Communication Applications factory
>
Specifications
Current - Supply:
25mA
Operating Temperature:
-40℃~+85℃
Output Type:
LVCMOS
Voltage - Supply:
3.3V
Frequency Stability:
±18ppm
Frequency:
96MHz
Mfr. Part #:
ABLNO-V-96.000MHZ-T2
Model Number:
ABLNO-V-96.000MHZ-T2
Package:
SMD-4P,8.7x14.3mm
Key Attributes
Product Description

Product Overview

The ABLNO Ultra Low Phase Noise XO/VCXO is a high-performance crystal oscillator designed for demanding communication and test & measurement applications. It features ultra-low phase noise, high 'Q' 3rd overtone crystal technology, and a wide operating temperature range. Available in a compact 14.3 x 8.7 x 5.5mm package, it offers standard LVCMOS RF output and is RoHS compliant. This oscillator is suitable for satellite modem communication systems, military communications, low phase noise signal sources, high definition TV, and ultra-low jitter RF communication circuitry.

Product Attributes

  • Brand: ABRACON
  • Series: ABLNO
  • Type: Ultra Low Phase Noise XO / VCXO
  • Certifications: ISO9001-2015 Certified, RoHS Compliant, Pb
  • Sensitivity: ESD Sensitive
  • Packaging: Available in Tape & Reel options (T2 for 250 units, T for 1000 units)
  • Origin: Spicewood, TX, USA (implied by address)

Technical Specifications

Parameter Minimum Typical Maximum Units Notes
General Specifications
Dimensions 14.3 x 8.7 x 5.5 mm
RF Output Frequency Range 24.576 200.00 MHz
Standard Available Frequencies 24.576MHz, 80.00MHz, 81.92MHz, 92.16MHz, 96.00MHz, 98.304MHz, 100MHz, 104.00MHz, 106.25MHz, 120.00MHz, 122.88MHz, 125.00MHz, 150.00MHz, 155.52MHz, 156.250MHz, 200MHz (Custom frequencies available upon request)
Supply Voltage (Vdd) 3.135 3.300 3.465 Volts
Current Drain (50MHz ~ 99.999MHz) 25.00 mA
Current Drain (100MHz ~ 149.999MHz) 35.00 mA
Current Drain ( 150.00MHz) 40.00 mA
Output Waveform LVCMOS
Output Load 15 pF
VOH 0.9*Vdd Volts
VOL 0.1*Vdd Volts
Symmetry 45 50 55 %
Rise & Fall Times 3.0 ns
Operating Temperature Range -40 +85 C Standard
Frequency Stability Over (-40 C to +85C) 12.00 18.00 ppm Relative to measured frequency @ 25C
Frequency Stability (All effects, including Aging) 28.00 ppm Over 10-years
Storage Temperature Range -40 +90 C
Aging (First Year) 2.00 ppm
Aging (5-Years) 5.00 ppm
Aging (10-Years) 7.00 ppm
Phase Noise & Jitter (VCXO Configuration)
Phase Noise (24.576MHz Carrier) @ 10 Hz offset -90 -82 dBc/Hz Vdd=3.3V, Note #1 & #2
Phase Noise (24.576MHz Carrier) @ 100 Hz offset -120 -115 dBc/Hz Vdd=3.3V, Note #1 & #2
Phase Noise (24.576MHz Carrier) @ 1,000 Hz offset -145 -140 dBc/Hz Vdd=3.3V, Note #1 & #2
Phase Noise (24.576MHz Carrier) @ 10,000 Hz offset -165 -160 dBc/Hz Vdd=3.3V, Note #1 & #2
Phase Noise (24.576MHz Carrier) @ 100,000 Hz offset -166 -165 dBc/Hz Vdd=3.3V, Note #1 & #2
Phase Noise (24.576MHz Carrier) @ 1,000,000 Hz offset -166 -165 dBc/Hz Vdd=3.3V, Note #1 & #2
RMS Jitter (24.576MHz Carrier, 12kHz ~ 20MHz BW) <0.100 0.125 ps Max.
Phase Noise (100MHz Carrier) @ 10 Hz offset -88 -82 dBc/Hz Vdd=3.3V, Note #1 & #2
Phase Noise (100MHz Carrier) @ 100 Hz offset -118 -115 dBc/Hz Vdd=3.3V, Note #1 & #2
Phase Noise (100MHz Carrier) @ 1,000 Hz offset -141 -138 dBc/Hz Vdd=3.3V, Note #1 & #2
Phase Noise (100MHz Carrier) @ 10,000 Hz offset -160 -155 dBc/Hz Vdd=3.3V, Note #1 & #2
Phase Noise (100MHz Carrier) @ 100,000 Hz offset -161 -160 dBc/Hz Vdd=3.3V, Note #1 & #2
Phase Noise (100MHz Carrier) @ 1,000,000 Hz offset -165 -160 dBc/Hz Vdd=3.3V, Note #1 & #2
RMS Jitter (100MHz Carrier, 12kHz ~ 20MHz BW) <0.050 0.100 ps Max.
Phase Noise (156.25MHz Carrier) @ 10 Hz offset -75 -70 dBc/Hz Vdd=3.3V, Note #1 & #2
Phase Noise (156.25MHz Carrier) @ 100 Hz offset -110 -105 dBc/Hz Vdd=3.3V, Note #1 & #2
Phase Noise (156.25MHz Carrier) @ 1,000 Hz offset -140 -135 dBc/Hz Vdd=3.3V, Note #1 & #2
Phase Noise (156.25MHz Carrier) @ 10,000 Hz offset -155 -150 dBc/Hz Vdd=3.3V, Note #1 & #2
Phase Noise (156.25MHz Carrier) @ 100,000 Hz offset -161 -160 dBc/Hz Vdd=3.3V, Note #1 & #2
Phase Noise (156.25MHz Carrier) @ 1,000,000 Hz offset -165 -160 dBc/Hz Vdd=3.3V, Note #1 & #2
RMS Jitter (156.25MHz Carrier, 12kHz ~ 20MHz BW) <0.050 0.100 ps Max.
Phase Noise (200MHz Carrier) @ 10 Hz offset -75 -70 dBc/Hz Vdd=3.3V, Note #1 & #2
Phase Noise (200MHz Carrier) @ 100 Hz offset -105 -100 dBc/Hz Vdd=3.3V, Note #1 & #2
Phase Noise (200MHz Carrier) @ 1,000 Hz offset -135 -130 dBc/Hz Vdd=3.3V, Note #1 & #2
Phase Noise (200MHz Carrier) @ 10,000 Hz offset -150 -145 dBc/Hz Vdd=3.3V, Note #1 & #2
Phase Noise (200MHz Carrier) @ 100,000 Hz offset -155 -150 dBc/Hz Vdd=3.3V, Note #1 & #2
RMS Jitter (200MHz Carrier, 12kHz ~ 20MHz BW) <0.020 0.030 ps Max.
Electrical Frequency Adjustment (VCXO Only)
Control Voltage Range (Vc) 0.0 1.65 3.30 Volts
Frequency Pull Range 28.00 55.00 ppm Referenced to the carrier
Frequency Pull Slope Positive
Control Port Impedance 10 k
Control Port Linearity 10 %
Pin Functionality
Pin 1 Voltage Control (Vc) for VCXO; No Connect (N/C) for XO
Pin 2 Ground
Pin 3 RF Output
Pin 4 Vdd

Notes:

  • Note #1: Maximum Phase Noise is verified on 100% of the parts at 25C 3C.
  • Note #2: The specified Phase Noise & Jitter is with the oscillator device configured as a VCXO. In XO configuration, the Phase Noise will be slightly better at each offset between 10Hz and 10 kHz, by approximately -3dB to -5dB.

2411220045_ABRACON-ABLNO-V-96-000MHZ-T2_C1988007.pdf

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